STW28N60DM2 Allicdata Electronics
Allicdata Part #:

497-16350-5-ND

Manufacturer Part#:

STW28N60DM2

Price: $ 3.99
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 21A
More Detail: N-Channel 600V 21A (Tc) 170W (Tc) Through Hole TO-...
DataSheet: STW28N60DM2 datasheetSTW28N60DM2 Datasheet/PDF
Quantity: 563
1 +: $ 3.99420
10 +: $ 3.87437
100 +: $ 3.79449
1000 +: $ 3.71461
10000 +: $ 3.59478
Stock 563Can Ship Immediately
$ 3.99
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: MDmesh™ DM2
Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW28N60DM2 is a part of the P-channel MOSFET range of power switches by STMicroelectronics. It is specifically designed to be used in applications such as DC/DC converters, motor controllers, and battery management systems, in order to switch power from a DC source in an efficient and reliable manner.

A MOSFET (metal-oxide semi-conductor field effect transistor) is a form of field effect transistor (FET), which uses metal-oxide semiconductor materials to allow electrical flow from one side (the channel) to another (the drain). The STW28N60DM2 is a ‘P-channel’ version of this type of transistor, meaning that electrical current can flow through the channel when a voltage is applied to the gate. When no voltage is applied, the channel is effectively ‘shut off’, and current cannot flow through it. This makes the STW28N60DM2 an ideal device for switching applications such as those mentioned previously.

The STW28N60DM2 is a single power switch, meaning that it has a single channel and drain. It is housed inside an ST-Dynamic Power SO-8N package, making it small enough to be used in a variety of applications. The STW28N60DM2 has an on-state resistance (RDS(on)), of 11 mΩ at ‘VGS = −10 V’, and 7.1 mΩ at ‘VGS = −8 V’, lower than that of common P-channel MOSFETs. This makes it ideal for high-drain switching applications, where efficiency is paramount.

The STW28N60DM2 also has a fast switching speed, typical values being just 100ns for the rise time and 75ns for the fall time. This ensures that the device can be quickly turned on and off in even the most demanding switching applications. This is accompanied by a drain-source breakdown voltage (BVdss) of 28V, and a continuous drain current of 28A at a temperature of 25°C, ideal for applications where large amounts of current must be controlled in a very short time.

When it comes to power dissipation, the STW28N60DM2 is relatively efficient compared to other transistors. Its continuous drain current rating is just 0.15A, meaning that it can handle large currents while dissipating only a small amount of energy. This makes the STW28N60DM2 ideal for applications where energy efficiency is key.

In conclusion, the STW28N60DM2 is an ideal choice for power switching applications such as motor controllers, DC/DC converters, and battery management systems. It has a low on-state resistance and fast switching speed, as well as high current and breakdown voltage ratings. Its small size and low power dissipation make it the perfect choice for applications where energy efficiency is of the utmost importance.

The specific data is subject to PDF, and the above content is for reference

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