STW27N60M2-EP

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STW27N60M2-EP is a type of metal-oxide semiconductor field effect transistor (MOSFET) manufactured by ON Semiconductor. It is a normally-off, 400 V, N-channel MOSFET optimized for excellent switching performance, featuring a low gate-charge and low on-resistance. The external package of the device includes an ultra-thin-body TO-220EP and a heatsink.

The applications of STW27N60M2-EP are power circuits of xDSL, gate drivers, AC-DC converters, high-eng bobbin transformers and other high-power applications. This power MOSFET is suitable for switching applications where high speed, low on-resistance and minimum gate charge are required. In addition, the devices are also suitable for power factor correction (PFC) to provide a fast switching speed and low conduction loss.

This MOSFET operates using the principle of electrostatic induction, which is a form of electromagnetic induction. The main components of a MOSFET are the source, gate, and drain. The source and drain connections carry the electrical current. The gate connection contains the transistor’s control elements; when a voltage is applied to the gate connection, a field-effect current is generated between the source and drain connections, thereby controlling the current flow.

The device is designed using advanced trench technology to minimize on-resistance, while providing superior switching performance and improved reliability. The short circuit withstand current and avalanche characteristic of the device are improved. The device has a low maximum on-state resistance (RDS(on)) at 25°C, a very low gate charge (Qg), and a low threshold voltage (VGSth) of 4.0V. The product can operate at a continuous current of 28A and in pulse mode up to 47A.

The STW27N60M2-EP offers improved efficiency, decreased switching losses, and reduced system cost. It features a low gate-charge for better power efficiency and low-noise operation. In addition, the device is designed with an integrated source-drain diode for fast switching speeds. The device is designed to deliver superior performance and functionality in high-power applications.

In conclusion, STW27N60M2-EP is an N-channel MOSFET designed for high-power applications. Its low gate charge, low on-resistance, and low threshold voltage make it ideal for switching applications that require high speed, low conduction loss, and excellent switching performance. In addition, the device is also suitable for power factor correction (PFC) to improve the efficiency of the system.

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