STW21NM60ND

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW21NM60ND is a 600V N-channel power MOSFET from STMicroelectronics designed for high voltage and power applications.It features very low RDS(on) and low output capacitance, providing for low gate-to-source and low drain-to-source charge. This device is particularly suited for high frequency switching applications in switched-mode power supplies, motor control, and other high power and voltage circuits.

The device is built with a proprietary monolithic Dual N-Channel PowerTrench® MOSFET technology and offers very low on-state resistance and low gate input capacitance while maintaining excellent ruggedness and stability when operating at high frequency.

The STW21NM60ND is available in a standard TO-220 Power Packag and operates at temperatures of up to 175°C. The device is also RoHS compliant.

Application areas

The STW21NM60ND is well suited for high-efficiency applications requiring excellent resistance and gate input capacitance. This includes applications where a low gate-to-source and low drain-to-source charge are critical, such as switched-mode power supplies, motor control, high power/voltage circuits and more.

Working Principle

The STW21NM60ND is an N-Channel Power MOSFET built with a proprietary monolithic Dual N-Channel PowerTrench® technology. The PowerTrench design combines two N-channel MOSFETs in a single package with a shared source and body connection. This provides an impressive level of resistance and gate input capacitance for a 600V N-Channel MOSFET.

The device is driven by an input voltage applied to the gate terminal. The gate-source voltage results in an electric field within the channel that supports current flow between the source and drain terminal when it exceeds the panel threshold VGS(th) of 8V. The MOSFETs support high frequency switching applications by utilizing very low on-state resistance, RDS(on), and low gate input capacitance.

Advantages

The STW21NM60ND offers a number of advantages for high frequency switching applications. These include a low RDS(on) and low gate-to-source and drain-to-source charge. The device is rated for up to 175°C and is RoHS compliant, making it suitable for environmentally conscious designs. It also has a very low input capacitance, which helps to reduce switching losses.

Disadvantages

The STW21NM60ND has a maximum current rating of 30A and a minimum breakdown voltage rating of 600V, which is lower than some other MOSFETs. This limits its output capability and the device may not be suitable for applications requiring higher current and voltage ratings.

Conclusion

The STW21NM60ND is an ideal power MOSFET for high frequency switching applications where a low gate-to-source and drain-to-source charge and very low RDS(on) are required. The device features a proprietary monolithic Dual N-Channel PowerTrench® technology and is available in a TO-220 package. It offers excellent efficiency and is rated for temperatures up to 175°C.

The specific data is subject to PDF, and the above content is for reference