STW20N95K5 Allicdata Electronics
Allicdata Part #:

497-12872-5-ND

Manufacturer Part#:

STW20N95K5

Price: $ 5.50
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 17.5A TO-247
More Detail: N-Channel 950V 17.5A (Tc) 250W (Tc) Through Hole T...
DataSheet: STW20N95K5 datasheetSTW20N95K5 Datasheet/PDF
Quantity: 18
1 +: $ 5.00220
30 +: $ 4.09920
120 +: $ 3.69931
510 +: $ 3.09942
1020 +: $ 2.69949
Stock 18Can Ship Immediately
$ 5.5
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW20N95K5 is a N-channel power MOSFET transistor. It is a single, package-integrated MOSFET, which can be used in a wide variety of applications to serve many needs. This article seeks to discuss the application field and working principle of STW20N95K5.

Applications

There are many uses for the STW20N95K5. They can be used in DC-DC converters, automated assembly machines, multi-channel motor controllers, battery protection circuits, and robotic motion control systems. Additionally, this device performs well in applications where high current and low power consumption are important characteristics. Its high voltage capabilities make it ideal for use in systems requiring high-voltage protection. Finally, its adjustable gate threshold voltage makes it ideal for use in applications where accuracy and precision control is important.

Working Principle

The STW20N95K5 is a N-channel MOSFET (metal oxide semiconductor field effect transistor), and operates by the principle of quantum tunneling. The MOSFET is composed of a source, gate, and drain. An electric charge applied to the gate terminal changes the properties of the transistor and affects its operation. There is a constant current flow between the source and the drain and is regulated by the voltage applied to the gate. As the voltage increases, so does the current flow between the source and the drain. This current flow can be adjusted to control the direction, speed, or power of a system.

The STW20N95K5 is fabricated with a high-contrast isolation layer to reduce parasitic capacitances and improve its overall performance. It has ESD protection (electrostatic discharge protection) to prevent static damage from occurring. It is designed to operate in the range of -55 to +175 degrees Celsius and has a minimum current ratio (Idss) of 1.5A.

Conclusion

The STW20N95K5 is a versatile single MOSFET with a variety of applications. It operates by the principle of quantum tunneling and is capable of providing a stable current flow. Its high voltage protection capabilities, adjustable gate threshold voltage, and wide temperature range make it ideal for use in many of today\'s electronic devices. This article has detailed the applications and working principle of the STW20N95K5, and demonstrated its effectiveness and utility.

The specific data is subject to PDF, and the above content is for reference

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