STW26NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STW26NM60N is a relatively new model of ultra-low resistance power MOSFET developed by ST Microelectronics, capable of managing large current up to 66A. It has a very low drain-source tunnelling current of just 40mA and a gate-source cut-off voltage of 620V.The STW26NM60N operates in two modes of operation, enhancement-mode and depletion-mode. In enhancement-mode, the MOSFET is switched ‘on’ when a positive voltage is applied across the gate and source of the device. Alternatively, a negative voltage can be applied in order to switch the MOSFET in to the depletion-mode, where the MOSFET is switched ‘off’.The primary application of this MOSFET lies in high-current applications such as ballast, power supplies, motors, and other similar applications. Further, due to its ultra-low resistance capacity, this MOSFET can be successfully used in a range of industrial, automotive, and consumer electronics.This power MOSFET has been manufactured using advanced STripFET technology which utilizes seven metal planes to enhance thermal dissipation and its switching properties. The metal planes between the drain, source and gate helps in reducing the overall size of the MOSFET.The device works on a principle such as the voltage between the gate and the source exceeds the threshold level, electrons start flowing from the source to the drain. The electric field which is brought about due to the voltage between the gate and the source drifts the electrons from the source to the drain which in turn causes the flow of current from source to drain thereby enhancing the switching properties of the device.The STW26NM60N contains two types of gate protection structures which provide stable operation in extreme conditions. It also includes a built-in Schottky diode between source and drain which assists in conducting current in the forward direction and prevents current from flowing in the reverse direction.The STW26NM60N offers some significant advantages such as its high voltage ratings and current handling capabilities, improved switching speed, built-in reverse blocking capability, increased thermal efficiency and its enhanced ruggedness.In summary, the STW26NM60N is a innovative ultra-low resistance power MOSFET designed by STMicroelectronics. It is optimized for large current applications and offers remarkable benefits such as high voltage ratings, efficient gate protection and improved thermal dissipation. This device is suitable for applications in industrial, automotive, and consumer electronics due to its excellent switching properties.

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