STW25NM50N Allicdata Electronics
Allicdata Part #:

497-4675-5-ND

Manufacturer Part#:

STW25NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 22A TO-247
More Detail: N-Channel 500V 22A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: STW25NM50N datasheetSTW25NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STW25NM50N is a type of field-effect transistor (FET) commonly used as a switch in electronic applications. It is constructed in a 0.25 μm semiconductor process and is designed to provide a regulated amount of current in a single-ended application. It has a range of three different configurations, including a single-ended N-channel, dual-ended N-channel, and dual-ended P-channel. It is typically used in applications such as high frequency wireless communications and mobile device applications.

A field-effect transistor (FET) is an active transistor device. It is designed to be used as a switch that can open or close to control a flow of electrons. FETs are often used in applications that require a high-powered switch, such as high-voltage applications. They can also be used in low-power applications like audio amplifiers and digital signal processing.

The STW25NM50N has the following characteristics: it has a typical gate threshold voltage of 5V, a maximum gate leakage of 5nA, a gate threshold voltage of 3.2V and a typical gate capacitance of 1.6nF. It also has a current rating of 50mA and is rated for a maximum drain-source voltage of 25V. The STW25NM50N is usually used in high-power applications and is designed to provide a regulated current in a single-ended application.

The working principle of the STW25NM50N is simple. When a voltage is applied to its gate, it opens or closes depending on the type of FET being used. In the case of an N-Channel FET, when a positive voltage is applied to the gate, the FET will turn on, allowing current to flow through it. When the voltage is removed, the FET turns off and the current flow is blocked. The same principle applies to a P-Channel FET, but instead of applying a positive voltage to the gate, a negative voltage is used.

In the case of the STW25NM50N, a single-ended N-Channel FET, the application fields include high-frequency wireless communication, mobile device applications, data processing and backlighting in LCD displays. It can be used as a power switch, a power amplifier, an analog switch, a voltage regulator and much more. The device offers excellent performance in many high-frequency applications due to its high switching frequencies, low power dissipation and low on-state resistance.

The STW25NM50N is a reliable, robust and efficient switch for many applications. Its low on-state resistance, high switching frequency and small form factor make it an appealing choice for many applications. The device is easy to use, making it suitable for a wide range of applications. In conclusion, the STW25NM50N is a high frequency and power-efficient switch for a diverse array of applications.

The specific data is subject to PDF, and the above content is for reference

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