STW26N60M2

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STW26N60M2 is an insulated gate bipolar transistor (IGBT) that is part of the STW family of devices, STMicroelectronics\' ultra-fast Power MOSFETs. It is designed to provide high current capability, high frequency operation, and low turn-on switching losses. The device features advanced super-junction trench technology, a wide operating temperature range, self-protected reverse drain-source capability, and low input capacitance.

The STW26N60M2 IGBT, like all IGBTs, is a power device that uses a reverse-biased gate-source junction to control the conduction of a reverse-biased collector-emitter (CE) junction. The gate voltage and collector voltage control the current flow between the collector and the emitter. The SOA (Safe Operating Area) graph provides the maximum current that can be delivered for a given application.

The STW26N60M2 IGBT is a single-chip power conversion module designed for a wide range of applications, including motor drives and control, frequency converters, lighting, induction heaters and battery chargers. It is suitable for working with both AC and DC input voltage and can operate at frequencies up to 1MHz. The low output voltage drop and short switching times provide high efficiency in power converters.

The STW26N60M2 IGBT works with different gate voltages, depending on the application. When used with a low gate voltage (3V-6V), it can be used for low power applications such as for solenoid drivers, light dimmers, and low power motor control. For higher power applications such as motor drives, the device can be driven with a gate voltage of 10V-20V.

One of the most important characteristics of the device is the gate charge. The gate charge determines how fast the device can be turned on and off. The lower the gate charge, the faster the device can be turned on and off. For example, the STW26N60M2 IGBT has a gate charge of 2.6nC, which is very low compared to other IGBTs with similar characteristics.

In addition to the gate charge and switching times, the STW26N60M2 IGBT also has very low turn-on and turn-off losses. This makes the device suitable for high-efficiency applications, with very low power dissipation in the power devices. The device also features a low input capacitance of 35pF and a high peak current capability of up to 55A.

The STW26N60M2 IGBT can be used in various power circuits and control systems. It is ideal for use in AC and DC motor control, frequency converters, adjustable speed drives, UPS systems, and other power circuits. It offers significant advantages in cost, efficiency and flexibility compared to other power transistors.

In summary, the STW26N60M2 IGBT is a high-performance IGBT for use in a wide range of automotive, industrial, and consumer applications. The device features advanced super-junction technology, a low gate charge, very low switching losses, and a wide range of operating voltages. This makes it an ideal choice for motor control, frequency converters, adjustable speed drives, and other power applications.

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