STW29NK50ZD

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW29NK50ZD is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that belongs to the single transistor family. It is a power MOSFET made from the International Rectifier Company that is used for applications with robust and powerful high frequency operation. As a power MOSFET, the STW29NK50ZD is ideal for switching applications, particularly those that require flexible and reliable driving characteristics, along with classic MOSFET design. It is available in several packaging styles, making it easy to use in a variety of different electronic designs.

The design of the STW29NK50ZD is based on a vertical structure which helps to minimize the input capacitance and minimize the on-resistance. It has an advanced cell design which ensures high threshold voltage (Vth) stability across the entire switching frequency range. Additionally, it provides an improved ruggedness the power consumption level, making it ideal for a variety of different applications. Its maximum rated drain current (ID) is consistently higher compared to other N-channel power MOS transistors, making it capable of handling large output voltage surges.

The main advantages of the STW29NK50ZD are its robust operation at a wide range of frequencies and its low on-resistance. Additionally, it is able to handle high voltage and temperature stability, even under extreme conditions. The built-in gate oxide insulation reduces gate leakage current and gate-to-drain depletion capacitance, allowing for improved switching speed and reliable operation even with large load changes. Additionally, it offers low reverse transfer capacitance, allowing for improved electromagnetic interference (EMI) performance.

The main application fields for the STW29NK50ZD are driver circuits and power circuits. It is commonly used in switching applications requiring high speed and robust operation, such as those found in automotive or high speed digital applications. It can be used to replace higher voltage transistors due to its high speed switching with minimum loss and interference. The STW29NK50ZD can also be used for other applications, such as power supplies, motor drives, switching regulators, and general purpose power supplies.

The working principle of the STW29NK50ZD is based on the use of the four elements that compose its basic structure. These elements are the channel, source, drain, and gate. An electric current is created between the source and drain terminals when a voltage is applied between the drain and gate terminals. This creates an electrostatic field in the channel material between the source and drain, controlling the current flow. The operation of the STW29NK50ZD is similar to that of other MOSFETs, though the vertical cell design of its structure helps to reduce capacitance and increase efficiency.

In conclusion, the STW29NK50ZD is a type of single MOSFET that is ideal for applications such as driver circuits and power supplies. Its robust operation, low on-resistance, and high temperature and voltage stability make it a top choice for reliable and efficient switching operations. The vertical cell design it features helps to reduce input capacitance and improve on-resistance, allowing for improved performance and stability. Its wide variety of packaging styles makes it suitable for a variety of electronic designs, making the STW29NK50ZD an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference