Allicdata Part #: | 497-4124-5-ND |
Manufacturer Part#: |
STW220NF75 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 75V 120A TO-247 |
More Detail: | N-Channel 75V 120A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | STW220NF75 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 430nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW220NF75 is designed to offer efficient switching efficiency, high current levels and low on-resistance. It is a single N-channel MOSFET designed to handle a wide range of both voltage and current levels. It is ideal for the applications of power supplies, electrically-induced switches, and related high-current devices.
A MOSFET consists of three main parts, namely a source, a drain and a gate. The MOSFET operates by controlling the flow of electrons through the source, the drain and the gate. The gate voltage controls the resistance between the source and the drain of the MOSFET, allowing the current to flow. The STW220NF75 uses N-channel junction technology to achieve exceptionally low on-resistance figures.
The STW220NF75 has an extremely low on-resistance of 0.25 ohms at 10 volts and a 1.0 amp current rate. This makes this device an excellent choice for applications such as power supplies, electrically-induced switches and related high-current devices. The low on-resistance encountered at these high Voltage and Current levels makes the STW220NF75 suitable for applications with heavy loads.
The STW220NF75 has a breakdown voltage of up to 20 V, with a maximum gate-source and gate-drain voltage of 14 V. It features a high transconductance of 50 and an extended temperature range of -55°C to 150°C. Its low gate charge and low output capacitance make it ideal for switching applications, and it is fully within the RoHS certification.
The STW220NF75 is suitable for a variety of applications where switching efficiency, current levels and low on-resistance are required. In power supply applications, it can be used to boost the efficiency, reduce electrical losses and improve power factor. Its high current levels also make it an ideal choice for electrically-induced switches, such as Relay or Solenoid switches. The low on-resistance and high transconductance of the STW220NF75 can be beneficial in high-power designs. It is also suitable for automotive applications, where its wide temperature range and RoHS certification can be seen as a great benefit.
Overall, the STW220NF75 is an excellent choice for applications requiring efficient switching, high current levels and low on-resistance. With its high transconductance, extended temperature range and RoHS certification, it is sure to satisfy a wide range of needs. As a single N-channel MOSFET, it is perfect for a variety of applications where a combination of high power, efficient switching and low on-resistance are a must.
The specific data is subject to PDF, and the above content is for reference
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