STW20NK50Z Allicdata Electronics
Allicdata Part #:

497-3261-5-ND

Manufacturer Part#:

STW20NK50Z

Price: $ 2.47
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 17A TO-247
More Detail: N-Channel 500V 17A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STW20NK50Z datasheetSTW20NK50Z Datasheet/PDF
Quantity: 1000
1 +: $ 2.47000
10 +: $ 2.39590
100 +: $ 2.34650
1000 +: $ 2.29710
10000 +: $ 2.22300
Stock 1000Can Ship Immediately
$ 2.47
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW20NK50Z is a type of single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is rated for an operating temperature of up to 175 degrees Celsius (C). It has a voltage rating of 500V and a current rating of 20A, making it a medium power FET. It is a popular choice for many applications and is commonly used in motor control circuits, DC-DC converters, and circuits capable of handling large power loads.

The STW20NK50Z is equipped with a built-in Drain-Source Diode (DSD). This feature is used to provide protection from reverse voltage in certain applications. The DSD is a semiconductor device which consists of a p-n junction. When the reverse voltage is applied, it causes a current to flow, thus providing protection from voltage spikes.

The device is composed of a three-terminal structure where the gate is used to control the flow of current between the source and drain. The Source and Drain pins are where the load is connected. The construction of the FET is such that when the voltage at the gate is less than the voltage at the source, then the FET is in its “off” state so no current flows. However, when the gate voltage is higher than the source voltage, then the FET is in its “on” state, allowing current to flow from the source to the drain.

The STW20NK50Z is well suited for many applications, such as switching power supply, voltage regulator, motor control, power conversion and distribution, automotive, and industrial applications. It is especially useful for high-powered applications that require precise control over current. Additionally, its robust design and high temperature rating make it an ideal choice for applications in high-temperature environments such as automotive and industrial settings.

The STW20NK50Z is also commonly used as a component in voltage regulators. It can be used as a variable resistor to set the output voltage at a precise level. The FET can be used to regulate the output of a DC-DC converter, allowing it to precisely adjust the output voltage. This is especially useful in applications that require a precise output voltage, such as computer peripherals and other low-voltage electronics.

In addition to the above mentioned applications, the STW20NK50Z is also popular in RF (Radio Frequency) and microwave circuits. An RF power amplifier uses FETs to amplify the input signal and increase its power. The STW20NK50Z is ideal for this application as it is efficient, fast switching, and has a low thermal resistance which helps to reduce heat buildup.

The STW20NK50Z is a great choice for many high-power applications, as it is both rugged and dependable. It is also efficient and fast switching, making it ideal for a variety of power-management applications. Additionally, its high temperature rating allows it to operate reliably even in the toughest of conditions.

The specific data is subject to PDF, and the above content is for reference

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