STW29NK50Z Allicdata Electronics
Allicdata Part #:

497-4425-5-ND

Manufacturer Part#:

STW29NK50Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 31A TO-247
More Detail: N-Channel 500V 31A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: STW29NK50Z datasheetSTW29NK50Z Datasheet/PDF
Quantity: 14
Stock 14Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 130 mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STW29NK50Z is a type of Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a single-ended drain device with typical applications as High-Speed Decoupling, Crossover, Buck-Boost DC/DC Converters, High-Voltage Inverters and Motor Drive Applications.

Application Field

The features of the STW29NK50Z make it ideal for a variety of applications. As a high-speed decoupling device it can be used to create low-noise power supply rails or active filtering in switching high-frequency circuits. As a crossover device, the STW29NK50Z is well suited for DC/DC converters and high-voltage inverters such as those found in renewable energy applications. In motor drive applications, such as air-conditioners and pumps, the STW29NK50Z can provide flexible voltage and current control.

Working Principle

The working principle of the STW29NK50Z is based on the field-effect transistor (FET) technology. FETs are bipolar voltage-controlled devices that are used to switch or amplify current. In the case of the STW29NK50Z, the FET is the result of a MOS (metal-oxide-semiconductor) gate structure. The gate region of the MOSFET device is separated from its drain and source regions by an oxide layer, which is formed as a result of thermal oxidation. The voltage applied to the gate control terminal of the STW29NK50Z controls the amount of current that is allowed to flow through the device. When a voltage is applied to the gate control terminal, a number of electrons are drawn to the oxide region and create an electric field which modifies the conduction properties of the device. This field controls the current flow and is referred to as the "channel." When a sufficient voltage is applied to the gate control terminal, the device is switched on and the current flow is increased.

Conclusion

The STW29NK50Z Power MOSFET is suitable for a variety of applications, including high-speed decoupling, crossover, buck-boost DC/DC converters, high-voltage inverters, and motor drives. Its working principle is based on FET technology, where a voltage applied to the gate control terminal controls the amount of current that is allowed to flow through the device. As such, the STW29NK50Z can provide a reliable, high-speed, and cost-effective solution for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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