UNR5115G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5115G0LTR-ND |
Manufacturer Part#: |
UNR5115G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR5115G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR5115G0L is a pre-biased single bipolar junction transistor(BJT) that is designed to provide improved performance through its previously fabricated components, standard packaging, and integrated circuit design. With its use, the UNR5115G0L can be utilized for a wide range of applications, with its main advantage being its low cost over other BJTs available on the market.
The UNR5115G0L is an NPN-based BJT that consists of a four-terminal PN junction with a single gate connection. This gate connection acts as a base-emitter circuit, allowing current to flow from the emitter to the collector while being modulated by the base current. The gates allow the UNR5115G0L to operate with a wide range of operating conditions and make it much more versatile than other BJTs.
The UNR5115G0L is ideal for applications involving high-amplitude signal processing, such as in power management circuits. With its low gate capacitance, it can be used in performance-oriented systems such as switching power supply circuits and power management circuits, allowing faster electrical response times and reduced noise levels. It is also ideal for applications involving high voltage breakdown, as its high breakdown voltage ensures high immunity to transient surges.
The UNR5115G0L is also suitable for use in audio amplifier circuits, due to its high stability and low noise level. With its superior gain performance, it provides improved audio performance with enhanced sound clarity and finesse. Its small surface mount design also ensures easier integration into existing circuits, reducing the cost of manufacturing and maintaining compatibility with the existing components.
In addition, the UNR5115G0L is capable of being used as a driver transistor in telecommunications equipment. With its superior performance and minimum energy cost, it can power various communication devices, such as private branch exchange systems, and provide an extremely reliable and low-noise control solution.
The UNR5115G0L is designed to provide improved performance, durability, and reliability in a wide range of applications. Its innovative design and use of components, as well as its ability to operate in multiple operating conditions, makes it a viable choice for numerous applications. Its small size and low power consumption have also made it a desirable solution for many applications, particularly where size and power consumption are both important factors.
The specific data is subject to PDF, and the above content is for reference
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