UNR511HG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR511HG0LTR-ND |
Manufacturer Part#: |
UNR511HG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR511HG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR511HG0L transistor is a pre-biased, single bipolar junction transistor (BJT). It is a two-terminal semiconductor device with a PN junction that is designed to switch a current on or off in an electronic circuit. The UNR211HG0L can be used in a wide variety of applications and is available in NPN and PNP configurations.
The UNR511HG0L is a PNP transistor and operates in the common emitter configuration with a maximum voltage rating of 300 volts. This transistor is capable of handling currents up to 150mA making it ideal for medium power switching applications. It features a collector-base breakdown voltage of 300 volts, a collector-emitter saturation voltage of 1.2V, an emitter saturation voltage of 1V, and a maximum power dissipation of 300mW. The UNR511HG0L also has a moderate voltage gain of 25 at 10V and a typical current gain of 110 at 10mA.
The UNR511HG0L is pre-biased, meaning that the base current must be supplied before it can be used. The base current is used to turn the transistor on and off and is typically supplied by a control circuit such as a microcontroller. This allows the transistor to switch on and off quickly and efficiently without having to wait for the current to be supplied by the load or other source.
The UNR511HG0L can be used in a variety of applications including switching circuits, amplifier circuits, power amplifiers, low-noise amplifiers, low-power switch-mode power supplies, resistive loads, and mixers. Its features make it an ideal choice for medium power switching applications such as automotive systems and motor drivers. It can also be used in high-speed switching applications such as transceivers and transmitters.
The UNR511HG0L is a versatile and reliable transistor that can be used in a wide range of applications. Its pre-biased operation allows for fast switching and its moderate voltage gain and current gain make it suitable for many medium power switching applications. Its high maximum voltage and current ratings make it suitable for use in higher power applications. The UNR511HG0L is a reliable and cost-effective transistor that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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