UNR521MG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521MG0LTR-ND |
Manufacturer Part#: |
UNR521MG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521MG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
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UNR521MG0L is a type of pre-biased bipolar junction transistors (BJT). It is commonly used in low-power applications and has wide applications in many fields.
A bipolar junction transistor (BJT) is a type of solid-state semi-conductor device typically used for switching and amplification purposes. Because of its two-terminal base-collector and emitter junctions, a BJT can control current and voltage gains. These current and voltage gains can then be used in a wide range of applications.
In the case of pre-biased BJTs, such as the UNR521MG0L, the base-emitter junction is pre-biased before the base-collector junction is subjected to a current or voltage. This means that the two circuits, the base-collector and the base-emitter, are in most cases working in opposition to each other. This is known as the “push-pull” effect, as the two early stages both have their independent roles in controlling the current and voltage gain.
The UNR521MG0L is generally used for low-power applications and is particularly useful for controlling high-side loads in relays and lamps. It is also often used in applications where low-voltage and/or low-frequency switching is needed, such as in light dimmers, fluorescent lamp ballasts, HVAC systems, and motor controllers. Additionally, UNR521MG0L transistors are useful for applications utilizing high-current Darlington pairs in order to reduce power dissipation.
The UNR521MG0L\'s basic working principle involves two components, the base and the collector. The base is an electrode used to bias the transistor and the collector is the output electrode. When voltage is applied across the two leads, current starts to flow from the collector to the emitter, based on the base-emitter voltage. Because of this, the collector current is dependent on the base-emitter voltage, which is adjustable and, thus, allows the transistor to function as an amplifier.
In summary, the UNR521MG0L is a type of pre-biased bipolar junction transistor (BJT) which is useful for low-power applications such as controlling high-side loads in relays, lights, and lamps; light dimmers; fluorescent lamp ballasts; HVAC systems; and motor controllers. Its working principle involves a base and collector, and it functions by using the base-emitter voltage as the adjustable current.
The specific data is subject to PDF, and the above content is for reference
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