UNR521N00L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521N00LTR-ND |
Manufacturer Part#: |
UNR521N00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521N00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar Junction Transistor – or BJT – is a type of transistor widely used in modern electronic applications. It is the oldest and most widely used type of transistor and is a two-terminal electronic component with three layers of semiconductor material. Also known as a link, it has two terminals attached to it, namely ‘emitter’ and ‘collector’, and one ‘base’ terminal which acts as a connector between the two. A single primitive device can several functions by adjusting its physical parameters such as current and voltage level. Typically a BJT is used as a switch, amplifier or as an oscillator.
The UNR521N00L is a single pre-biased BJT formed with two NPN transistors. This component has an emitter current, base current and collector current. It also has a number of external leads that hook up to an electricity source and also to a circuit board. The UNR521N00L offers users top features such as low capacitances, low noise, fast turn ON and OFF time, high insulation resistance and the ability to process frequencies in the MHz to GHz range.
The working principle of the UNR521N00L is fairly simple. Voltage on the collector terminal is applied to the base terminal and the application of this voltage makes the collector terminal to draw current from the emitter which in turn causes a reverse bias current to flow from the collector to the emitter. The device is programmed to work in several different modes depending on the specific components of an electronic circuit. When in a normal operating condition, the voltage on the base terminal is less than the voltage on the collector terminal making the voltage drop across the device larger than the voltage on the collector terminal.
The UNR521N00L application field includes radio frequency, power management, and other high-frequency amplifier applications in the MHz to GHz range. It is also used as a unity gain buffer, as a phase shift oscillator, and as a high-gain feedback amplifier. It can also be used as a driver circuit or in switching circuits, oscillators, inverters, and amplifiers. Due to its low capacitances, low noise, and fast turn off and on time, the UNR521N00L is the ideal choice for applications that require high levels of performance and reliability such as those that involve audio frequencies.
In conclusion, the UNR521N00L has numerous application fields. It is a single pre-biased NPN type BJT with features including low capacitances, low noise, fast turn off and on time, and a very high insulation resistance. It is typically used as a switch, amplifier, oscillator, unity gain buffer, driver circuit, and more. The device can also process frequencies in the MHz to GHz range, making it a preferable choice for applications such as radio frequency, power management, and higher frequency amplifiers.
The specific data is subject to PDF, and the above content is for reference
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