UNR5117G0L Allicdata Electronics

UNR5117G0L Discrete Semiconductor Products

Allicdata Part #:

UNR5117G0LTR-ND

Manufacturer Part#:

UNR5117G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR5117G0L datasheetUNR5117G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Description

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The UNR5117G0L is a pre-biased, single-bipolar junction transistor (BJT). A BJT consists of two regions, the emitter and the collector, which are separated by a thin layer of negative charge. The collector carries a small positive charge, while the emitter carries a small negative charge. This positive/negative system is used to control current flow across the two regions.

The UNR5117G0L is a pre-biased unit, which means it is designed to be turned on and off quickly with minimal adjustments to the bias current. This makes it ideal for high-speed switching applications, such as in power supplies and filters. The device has a high current capacity and can be used in circuits with up to 3V of applied voltage. It can also operate at frequencies up to 175 MHz, with a maximum collector-emitter voltage of 40V.

In addition to its high-speed switching capability, the UNR5117G0L also has built-in temperature protection. This protection limits the temperature rise of the device to less than 25°C when it is used in the proper circuit configuration. This protection is ideal for use in circuits that require a high degree of reliability and safety.

The UNR5117G0L is commonly used in consumer electronic products as a high-speed switch. It can be used to control audio signals, video signals, power supplies, and other electronic circuits. The device can also be used in automotive applications, such as controlling the radio, air conditioning, power windows, and other vehicle systems. Additionally, it can be used in industrial and military applications, such as controlling gas and liquid valves, motors and pumps, and other high-reliability systems.

The working principle of a pre-biased BJT is based on the saturated operation mode. In this mode, the collector current changes slowly and is determined by the base-emitter voltage. The collector-emitter voltage also remains constant when the base-emitter current is kept within a certain range. This makes the device ideal for circuits that require stable and reliable operation. Moreover, the device is able to operate at high speeds without having to adjust the bias current, which makes it suitable for high-speed switching applications.

The UNR5117G0L is a high-speed, pre-biased BJT that is ideal for consumer electronic products, automotive systems, and industrial and military applications. It is designed to switch quickly and reliably, and it has built-in temperature protection to ensure it runs safely and efficiently. With its high current capacity and fast switching speeds, the UNR5117G0L is a versatile device that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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