UNR521T00L Allicdata Electronics

UNR521T00L Discrete Semiconductor Products

Allicdata Part #:

UNR521T00LTR-ND

Manufacturer Part#:

UNR521T00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR521T00L datasheetUNR521T00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Description

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Transistors are often used in a wide array of applications, and among them, the UNR521T00L is one of the most popular. It is a single, pre-biased transistor, and is commonly used in digital circuits, audio amplifiers and many other applications. This article will discuss the UNR521T00L and its application field and working principle.

The UNR521T00L is a single, pre-biased bipolar junction transistor (BJT). It consists of a base, a collector and an emitter, with the collector and emitter connections made through two vertical metal-oxide-semiconductor field-effect transistors (MOSFETs). This type of transistor is very efficient in terms of power dissipation and switching speed, due to its low output capacitance and efficient thermal characteristics. Additionally, its pre-biased construction permits it to provide a high-speed switching performance for fast switching times, reducing power losses. Being a single, pre-biased transistor, it is used as a switch or amplifier in applications such as audio amplifiers, digital circuits and computer-aided design (CAD) systems.

In terms of its working principle, the UNR521T00L is capable of transferring charged carriers between the collector and emitter terminals. When the transistor is biased, the current that flows through it is the difference between the two input voltages. This current is then used to create an electric field that influences the electric potential of the semiconductor junction formed between the collector and emitter. This junction, in turn, acts on the current-carrying electrons and holes, creating a potential barrier that continues as long as the forward bias voltage is maintained.

In operation, the base–emitter junction is forward biased, with the semiconductor junction being set in the active region. As current is applied to the input, it creates a concentration gradient, which then causes electrons and holes to flow in the direction of the collector. At the same time, the electric field created by the applied current applies a negative voltage to the collector, repelling the majority of the electrons and holes away from the collector. This causes the collector to become negatively charged as it collects more electrons, and as a result, the collector voltage increases.

In addition to providing high-speed switching performance and efficient thermal characteristics, the UNR521T00L is also known for its low noise characteristics. This makes it an ideal choice for digital applications, as it reduces the amount of interference generated by the circuit, allowing the data to flow smoothly with minimal disruption. It is also used in audio amplifiers, where its low noise characteristics make it an ideal choice for creating high-quality sound.

The UNR521T00L is an extremely versatile transistor and is used in a wide range of applications. Its pre-biased construction makes it an excellent choice for digital applications, audio amplifiers and many other applications. It is also known for its efficient operation, low noise characteristics and high-speed switching performance.

The specific data is subject to PDF, and the above content is for reference

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