UNR51A6G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR51A6G0LTR-ND |
Manufacturer Part#: |
UNR51A6G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR51A6G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR51A6G0L is a field-effect transistor (FET) used in power management and control applications. It is based on pre-biased technology and can be used in both low- and high-power applications. It is commonly used in power amplifiers and power converters, as well as for other electronic control systems.
The UNR51A6G0L has both an N-type and a P-type FET, which are connected with a resistor. The resistor determines the operating point of the FET. This operating point can be adjusted so that the device can be used for both high- and low-power applications. This means that when you need more power, you can increase the operating point, and when you need less, you can reduce it.
The UNR51A6G0L works on a very basic principle. When an electric current is applied to the drain terminal of the device, it causes a change in the amount of charge stored in the gate. This in turn affects the current flow between the drain and source terminals. By controlling the amount of charge stored in the gate, you can control the amount of current flowing through the device. This is known as voltage mode control.
The UNR51A6G0L is a popular choice for power management and control applications due to its features. It is relatively easy to use, has a low power consumption, and is able to handle high voltages and currents. This makes it ideal for use in various applications such as power amplifiers, power converters, lighting control, and motor control.
The UNR51A6G0L is a single, pre-biased FET that requires no additional bias components. This simplifies the overall design and reduces the cost. The device is designed to handle both low and high power applications, making it versatile and reliable. Additionally, the UNR51A6G0L is designed to be robust and able to withstand extreme temperatures and some significant impacts.
In summary, the UNR51A6G0L is a pre-biased FET used for power management and control applications. Its features make it ideal for use in a wide range of applications, from power amplifiers and power converters to lighting control and motor control. It is easy to use and has a low power consumption, making it a cost-effective solution for electronic control systems. Additionally, the UNR51A6G0L is robust and able to handle extreme temperatures and impacts.
The specific data is subject to PDF, and the above content is for reference
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