UNR5211G0L Discrete Semiconductor Products

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The UNR5211G0L is a Single Pre-Biased Bipolar Transistor (BJT) device and is an ideal choice for switching and amplification applications that require an integrated bias current-mirror network. The UNR5211G0L is based on a high-voltage vertical NPN transistor which is specifically designed to provide high-voltage performance, low-cost operation and very low-noise operation. The UNR5211G0L features an integrated bias current mirror which provides a convenient way to bias the device. This feature increases the efficiency of the transistor, and allows the device to operate at higher driving speeds. Additionally, the UNR5211G0L has excellent noise immunity, which makes it suitable for high-speed applications.

The UNR5211G0L is well suited for applications which require relatively low input impedances and high-speed output switching. It is also used in audio, RF and sensor applications. The UNR5211G0L has a wide variety of uses, ranging from low-noise amplification in audio, to high-performance switching of large loads.

The UNR5211G0L operates at voltages up to 600 Volts, with a breakdown voltage of 400 Volts. The device is rated for a maximum collector voltage of 60V and has a maximum collector current of 2.5A. The UNR5211G0L is also characterized for leakage current and power dissipation. The device is rated for a maximum leakage current of 100 uA and a power dissipation of 2 Watts.

The basic working principle of the UNR5211G0L involves the operation of an NPN BJT. When a positive voltage source is connected to the Base terminal, the Base-Emitter junction of the BJT becomes forward-biased, and electrons in the Base region are enabled to flow into the Emitter. This causes a current to flow between the Base and Emitter terminals. As the current flows through the Base-Emitter junction, the current then flows to the Collector and out of the device. This forms the basic operation of the UNR5211G0L.

The UNR5211G0L has an integrated bias current mirror, which provides an input bias current of 10uA. This current mirror network allows the device to operate at higher currents and allows the UNR5211G0L to operate at higher frequencies. The integrated bias current mirror also reduces the amount of switching noise, providing improved performance in audio and RF applications.

The UNR5211G0L is a very reliable and robust device, capable of providing high-quality performance for a range of applications. Its integrated bias current mirror allows for improved performance in high-speed applications, and its high-voltage operation makes it ideal for use in high-frequency applications. Additionally, the integrated bias current mirror allows the device to operate at lower currents, reducing both power dissipation and switching noise.

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