ZXM61N02FTA Allicdata Electronics

ZXM61N02FTA Discrete Semiconductor Products

Allicdata Part #:

ZXM61N02FTR-ND

Manufacturer Part#:

ZXM61N02FTA

Price: $ 23.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 1.7A SOT23-3N-Channel 20V 1.7A (Ta...
More Detail: N/A
DataSheet: ZXM61N02FTA datasheetZXM61N02FTA Datasheet/PDF
Quantity: 228
1 +: $ 23.31000
Stock 228Can Ship Immediately
$ 23.31
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 930mA, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power - Max: --
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 15V
FET Feature: --
Power Dissipation (Max): 625mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: --
Description

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ZXM61N02FTA is an enhancement mode field-effect transistor (FET) designed for use in various types of applications, including power supplies and switching regulators. It is a single type and has a maximum drain-source voltage of 60 volts. The maximum junction temperature of the device is 175°C and it has a thermal resistance of 25°C/W. ZXM61N02FTA is also compatible with pulse applications.

Applications of ZXM61N02FTA

ZXM61N02FTA is most commonly used in battery-operated applications such as remote control and outdoor appliances. It can also be used in inverting, switching and amplifier circuits, as well as in power supplies, motor drives and automotive applications. The FET is also suitable for digital logic circuits, as well as for logic level/voltage conversion. Additionally, it is suitable for high-speed switching as it features a fast switching speed of 1.3µs.

Working Principle of ZXM61N02FTA

ZXM61N02FTA operates as a linear active element in nonlinear circuits. Its most important feature is its ability to control large currents with a small signal. When a small DC voltage VGS is applied to the gate terminal of the device, it controls the voltage between source and drain of the device. This allows for the current to be adjusted for a large range of applications. The operation of the device is based on the principle of conductivity modulation, which means that the voltage applied at the gate can change the conductivity of the channel between source and drain of the device. The current from the source to the drain is regulated by the applied voltage.

Features of ZXM61N02FTA

The main features of this field-effect transistor include: low gate threshold voltage (VGS(th) = -4 volts); low input and output capacitances; high DC voltage; low on-state resistance and high speed of switching. Additionally, it has the following advantages over other field-effect transistors: higher maximum operating temperature; better heat dissipation; high drain-source voltage; wide range of applications; voltage compatibility range; better noise immunity; better speed of switching and lower on-state resistance.

Conclusion

In conclusion ZXM61N02FTA is a versatile FET that can be used in a variety of applications ranging from power supplies and switching regulators to remote control and outdoor appliances. It features a low gate threshold voltage and low input and output capacitances, making it ideal for use in digital logic circuits, motor drives and automotive applications. Additionally, the FET has a fast switching speed of 1.3µs, along with low on-state resistance and a wide range of voltage compatibility that makes it suitable for a large range of applications.

The specific data is subject to PDF, and the above content is for reference

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