Allicdata Part #: | ZXM64P035L3-ND |
Manufacturer Part#: |
ZXM64P035L3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 35V 12A TO-220-3 |
More Detail: | P-Channel 35V 3.3A (Ta), 12A (Tc) 1.5W (Ta), 20W (... |
DataSheet: | ZXM64P035L3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta), 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 825pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 20W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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The ZXM64P035L3 is a high-performance N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device from Fairchild Semiconductor. It includes a wide range of features and applications in the device including insulated gate, high speed switching, efficient impact ionization, fast switching, enhanced reliability, and improved system performance.
The ZXM64P035L3 is an advanced MOSFET designed to deliver excellent switching performance with a high on-state current limit. The device has a high on-state current rating of up to 500A and an average on-state resistance of only 15mΩ at 25°C making it an ideal solution for high power and low-voltage applications. The device also features a reverse recovery time of just 6ns and a low gate charge of 20nC which makes it well suited for use in high-speed switching applications.
The ZXM64P035L3 is ideal for use in power supply, motor drive, and other power MOSFET solutions such as dc-dc, ac-dc and ac-ac inverters, Class D, Class AB and Class-B amplifiers, switching power supply, and voltage regulator applications. Additionally, the device can be used in high-power audio applications, instrumental amplifiers, active filters, and other high-density power applications.
The working principle of the ZXM64P035L3 is based on the application of a voltage across the source and drain terminals of the device, which causes a current to flow through it. This current is controlled by a gate voltage, which can be modulated to increase or decrease the on-state current flow. The gate voltage, in turn, is regulated by an external circuit, allowing the device to be operated in either an analog or a digital mode.
The ZXM64P035L3 is also designed to reduce EMI by providing reliable on-state current control and fast switching speeds. This reduces the noise generated by the device when it is in operation, minimizing interference with other electronic systems. This makes the device well suited for use in applications where EMI is an issue, such as wireless communication and automated control systems.
The device’s enhanced reliability makes it ideal for use in high-power applications, as it can withstand high voltage surges and high temperature variations. Furthermore, the ZXM64P035L3 is designed to promote system efficiency by reducing power loss. This makes the device an ideal choice for high-power, high-efficiency solutions.
In conclusion, the ZXM64P035L3 is a highly advanced N-channel MOSFET device from Fairchild Semiconductor that is ideal for use in high-power applications. The device offers a wide range of features including a high on-state current limit, low gate charge, fast switching speeds, reduced EMI, and improved reliability. Additionally, the device is designed to reduce power loss and increase system efficiency. It is an ideal choice for high-power and high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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