ZXM62N03E6TA Allicdata Electronics
Allicdata Part #:

ZXM62N03E6DKR-ND

Manufacturer Part#:

ZXM62N03E6TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 3.2A SOT-23-6
More Detail: N-Channel 30V 3.2A (Ta) 1.1W (Ta) Surface Mount SO...
DataSheet: ZXM62N03E6TA datasheetZXM62N03E6TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Digi-Reel® 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
FET Feature: --
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Description

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ZXM62N03E6TA is a type of Field Effect Transistor (FET), also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is mode of a Single type FET. FET stands for Field Effect Transistor, which are semiconductor devices used in a wide range of electronic applications and operations. A FET is a three-terminal semiconductor device consisting of three regions, each of which consists of a source, drain and gate region. The operation of a single FET is such that the source-drain current, which is proportional to the applied voltage between the source and drain, is controlled by the gate input, which can be either positive or negative.

ZXM62N03E6TA is a n-channel enhancement MOSFETS, meaning it is an n-channel type, since it is an enhancement MOSFET, no current will flow through the device until it is "turned on" by a suitable electrical signal applied to the gate. It features a low operating voltage and maximum drain current of 6A. The device has a relatively low threshold voltage, suitable for applications requiring low drive voltages.

ZXM62N03E6TA can be used in various applications requiring low drive voltage and high currents. It is commonly used in DC-DC converters, motor control systems and AC-DC converters. It is also used in circuits requiring low switching frequency like audio and communication systems. The primary application of this device is in high efficiency, high speed, low power switching applications.

The basic operating principle of the ZXM62N03E6TA is very simple. It acts as a voltage-controlled resistor. Through the gate terminal, the FET receives a voltage signal, which controls the resistance between the source and drain. When the gate voltage increases, the resistance between the source and drain decreases. This, in turn, increases the current flowing through the device, allowing it to act as a switch.

Using this device, a circuit designer can create a wide range of power switching applications. For example, the device can be used to create a DC-DC converter that can convert an input voltage to an output voltage with high efficiency, eliminating the need for a transformer or inductor in the circuit. Additionally, the device can also be used in output stages of power amplifier designs to ensure high performance, while reducing the heat dissipated by the circuit.

In summary, the ZXM62N03E6TA is a type of field effect transistor (FET) that is particularly well suited for applications requiring low drive voltage and high current. It features a low threshold voltage and maximum current of 6A. Additionally, the device is suitable for DC-DC converters, motor control systems and AC-DC converters. Finally, the device acts as a voltage-controlled resistor between the source and drain, allowing current to flow through the device when the gate terminal is driven with a suitable signal.

The specific data is subject to PDF, and the above content is for reference

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