Allicdata Part #: | ZXM62P03GTA-ND |
Manufacturer Part#: |
ZXM62P03GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 2.9A SOT223 |
More Detail: | P-Channel 30V 2.9A (Ta), 4A (Tc) 2W (Ta) Surface M... |
DataSheet: | ZXM62P03GTA Datasheet/PDF |
Quantity: | 1000 |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.2nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta), 4A (Tc) |
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The ZXM62P03GTA is part of a family of single N-Channel MOSFETs that is designed to be used in applications requiring low on-resistance and fast switching performance. It is suitable for both high-side and low-side switching, and is optimized for off-state efficiency, low Vds(on) and minimal leakage currents.
The ZXM62P03GTA contains a single N-Channel MOSFET that is built on a single chip and utilizes an advanced, high-power process technology. The MOSFET has a low gate-threshold voltage, Vth of 5V, which means that it can switch at lower gate voltages, resulting in a faster switching time and higher efficiency. It also has an optimized on-resistance, Rds(on) of 4.0 ohms, and ultra-low gate-leakage currents, which ensure high reliability. The ZXM62P03GTA is also ESD-resistant, and features integrated shoot-through protection, which helps minimize power losses during switching.
The ZXM62P03GTA also features a wide range of features that make it ideal for applications such as power supplies, portable equipment, and medical applications. The MOSFET has a low operating temperature of -40°C to 85°C and can handle power load current up to 60A. It is also designed to be tolerant to high voltage transients and is RoHS compliant.
The working principle of a MOSFET is based on charge carrier transport in and out of the device, which is enabled by the effect of an external electric field and controlled by the MOSFET\'s gate voltage. The device consists of three terminals: the drain (D), the source (S), and the gate (G). The MOSFET is operated in three different modes - the enhancement mode, the depletion mode, and the linear control mode. In the enhancement mode, a positive gate voltage results in the device admitted carriers, which results in an increase in drain current. In the depletion mode, a negative gate voltage reduces the number of carriers, resulting in a decrease in drain current. In the linear control mode, the device transistors act as a linear amplifier and provide closed-loop control of the current, allowing the MOSFET to be used in applications such as power supplies and motor controls.
In conclusion, the ZXM62P03GTA is a single N-Channel MOSFET which is designed for low on-resistance and fast switching performance. It is ideal for high-side and low-side switching applications, and features integrated shoot-through protection for higher efficiency and reliability. The MOSFET has a wide operating temperature range and is RoHS compliant, making it suitable for a wide range of applications, including power supplies, portable equipment and medical applications.
The specific data is subject to PDF, and the above content is for reference
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