Allicdata Part #: | ZXM64N03XTC-ND |
Manufacturer Part#: |
ZXM64N03XTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 5A 8MSOP |
More Detail: | N-Channel 30V 5A (Ta) 1.1W (Ta) Surface Mount 8-MS... |
DataSheet: | ZXM64N03XTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MSOP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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The ZXM64N03XTC is a low harmonic distortion and low input bias current N-channel MOSFET with a zero threshold voltage and low on resistance. This device belongs to the discrete semiconductor family and is used in various applications such as switching and power management. The MOSFET is available in three packages such as TO-220, TO-252, and SOT-23.
The MOSFET has been designed with a low harmonic distortion and low input bias current for improved system performance over standard devices. It has a gate charge to reduce gate-to-source capacitance and gate resistance in order to reduce switching time. It also has low on-resistance and low on-state voltage drop for improved efficiency. The device is offered in a number of variants such as P-Channel, N-Channel, Logic Level, and HEXFET.
Working Principle
The ZXM64N03XTCs are N-type MOSFETs that are capable of providing typically low on-state resistance, high switching speed and low reverse leakage. The device has a voltage controlled P-N junction, the drain and source terminals, between which is a thin conductive gate. The gate of the MOSFET is made of a region of a solid-state semiconductor material, giving it the name “metal–oxide–semiconductor field effect transistors (MOSFET)”.
When the voltage between the gate and source terminals is sufficient, the device turns on, allowing current to flow mainly through the channel along source-drain path. The current flow of the MOSFET is almost proportional to the voltage applied to the gate terminal and is determined by the gate capacitance and gate-to-source resistance. The voltage between the gate and source terminals known as the threshold voltage.
Applications
The ZXM64N03XTC is widely used in various applications, including industrial control, power management, and switching. These include motor control, power converters, switchmode power supplies, and other general-purpose DC-to-DC converters. The device is suitable for power switching applications such as battery charging, motor control, and power factor correction.
In motor control applications, the MOSFET is used to control the current flow between the DC battery and the motor. This provides a smooth, efficient and low harmonic distortion motor control power switching. The MOSFET also has low noise characteristics, making it suitable for use as an AC ‘bridge’ in power factor correction applications. In addition, the low RDS(on) and low gate charge characteristics make the device excellent for use in low-voltage DC-to-DC conversion.
The ZXM64N03XTC MOSFET is also suitable for general-purpose switching applications where a low RDS(on) is desired. Applications such as transformers, lighting loads, switching power and battery charging utilize the low RDS(on) characteristic to minimize power loss. Furthermore, with its integrated monitor/protection, the device can be used in systems requiring monitoring and protection such as metering and telecommunications.
The ZXM64N03XTC is a versatile, low harmonic distortion and low input bias current MOSFET, ideal for a wide range of power management applications. It offers improved efficiency and switching speed over standard devices, as well as low gate charge and low on-resistance. With its integrated monitors, protection, and low RDS(on) characteristics, it is suitable for a variety of applications, including power factor correction, power converters and switchmode power supplies, motor control, and general-purpose switching.
The specific data is subject to PDF, and the above content is for reference
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