Allicdata Part #: | ZXM63N02E6DKR-ND |
Manufacturer Part#: |
ZXM63N02E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 3.2A SOT-23-6 |
More Detail: | N-Channel 20V Surface Mount SOT-23-6 |
DataSheet: | ZXM63N02E6TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Digi-Reel® |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-6 |
Package / Case: | SOT-23-6 |
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The ZXM63N02E6TA is one of the most advanced field-effect transistors (FET) available today. It is a single type of FET, meaning it is constructed with only one source and one drain region. This type of FET is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and it is the basis for most modern semiconductor devices.
The device works by manipulating a voltage applied to the gate region of the transistor, which controls the current flow through the device. This type of transistor is unipolar, meaning it either conducts or blocks current depending on the state of the gate voltage. With the ZXM63N02E6TA, the gate voltage can be as low as 2V for turn on, and as high as 8V for turn off.
The ZXM63N02E6TA is known for its robust on-state performance and its high gain characteristics, making it ideal for use in precision analog and digital signal processing applications. It is also well suited for high-current power switching and control applications. The device has a high gate-source capacitance, which gives it fast switching speeds. This makes it suitable for use in high-speed switching applications like frequency converters and motor speed control.
The device has a rated drain current of 6.3A and a drain-source voltage of 500V, which makes it highly reliable. The device\'s Thermal Resistance (RθJA) is low, making it more effective in dissipating the heat generated by the device. Also, the ZXM63N02E6TA features low chip size and power consumption, which makes it economically efficient and highly compatible with different types of electronic devices. The device is also resistant to high temperatures, allowing it to be used in industrial or commercial environments where temperatures can reach high levels.
The ZXM63N02E6TA is commonly used in a variety of circuit design applications. These can range from logic circuits to high-current power switching and motor speed control. In addition, the device can be used in power control applications, to regulate the voltage and current needed by various devices. It is also a good choice for precision digital signal processing applications due to its high-gain characteristics.
The ZXM63N02E6TA is one of the most widely used FETs today, and for good reason. It is widely used for its robust on-state performance and superior gain characteristics. It is highly reliable and economical, making it well-suited for a variety of circuit design applications. Furthermore, its high gate-source capacitance allows for fast switching speeds, making it a great choice for applications such as frequency converters and motor speed control.
The specific data is subject to PDF, and the above content is for reference
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