ZXM62N03GTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM62N03GTR-ND |
Manufacturer Part#: |
ZXM62N03GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V ENHANCE SOT223 |
More Detail: | N-Channel 30V 3.4A (Ta), 4.7A (Tc) 2W (Ta) Surface... |
DataSheet: | ZXM62N03GTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta), 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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ZXM62N03GTA Application Field and Working Principle
The ZXM62N03GTA, sometimes referred to as the N-Channel MOSFET (Metal-Oxide-Silicon Field-Effect Transistor), is a power electronic device used for various applications. This FET (Field-effect transistor) has high switching speed, low input capacitance and low input resistance compared to other similar devices. It is widely used in wide range of industries for a variety of applications, including switch mode power supplies, automobile electronics, lighting, high-voltage pulse generation, telecom systems, and cloud computing.
This N-channel MOSFET is a three-terminal device that works on the principle of electrostatics. It is constructed from a thin layer of doped silicon and has a metal-oxide-silicon gate. The gate is insulated from the channel and it continuously adjusts the number of free electrons in the channel. When a positive voltage is applied to the gate, the number of free electrons in the channel increases, resulting in enhanced conductivity. Similarly, a negative voltage causes depletion of the electrons, resulting in lower conductivity.
The key parameters of the ZXM62N03GTA are forward voltage VCES, maximum temperature (Tj), maximum power dissipation (Pd), continuous drain current (Id), and maximum drain-source on-state resistance (RDS). These values determine the device’s suitable applications and maximum operating conditions. The ZXM62N03GTA is capable of sustaining current up to around 50-60A, with on-state resistance (RDS) of 0.0045 Ohm when operated at 40V. It is ideal for heavy-duty applications focusing on high current and power while maintaining good efficiency.
This N-channel MOSFET is capable of switching up to two million times/second while maintaining good efficiency in ultra-high frequency applications. It is also suitable for low temperature applications as it can maintain a sufficient amount of current with a temperature of -55°C, which is a great convenience in extreme environments. Thanks to its innovative design and characteristics, the ZXM62N03GTA is ideal for use in fields such as industrial automation, robotics, military equipment, and medical diagnosis and treatments.
In conclusion, the ZXM62N03GTA N-Channel MOSFET is a powerful and reliable device with excellent switching speed and efficiency. Its features make it suitable for a wide range of applications, including switch mode power supplies, automotive electronics, lighting, high voltage pulse generation, telecom systems, and cloud computing. With its proven performance and cost-effectiveness, the ZXM62N03GTA is a popular choice for many developers.
The specific data is subject to PDF, and the above content is for reference
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