ZXM66P02N8TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	25 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	43.3nC @ 4.5V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2068pF @ 15V
FET Feature:	--
Power Dissipation (Max):	1.56W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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ZXM66P02N8TA is a dual MOSFET transistor which is manufactured by Diodes Incorporated. It is a high voltage and high current-carrying component suitable for use in applications that require high power handling. The device consists of two 2N-channel MOSFETs formed on a common substrate. The drain is connected to the common source, while the common gate is connected to the source of the first MOSFET and the drain of the second MOSFET. The drain electrodes are exposed through an isolation layer which allows two devices to be connected to a single source. This allows two MOSFETs to be switched on and off simultaneously. The ZXM66P02N8TA is designed for use in applications that require high current capability. It can withstand high reverse voltages and has a low on-resistance which reduces power dissipation. It has a breakdown voltage of 70V and a continuous drain current rating of 3.2A. The device also has a low gate threshold voltage which enables it to be driven directly by a 5V logic signal. The ZXM66P02N8TA is ideal for use in applications such as motor and lighting control, overload protection, gate drivers and power management in consumer, automotive, and industrial applications. For example, it can be used to control the speed of a DC motor, to provide overload protection for a circuit, or to provide power management in an industrial or automotive system. In terms of its working principle, the ZXM66P02N8TA operates by allowing current to flow through the MOSFET when it is “on” and preventing current from flowing when it is “off”. When the gate voltage is low, the MOSFET is “off”, and when the gate voltage is high, the MOSFET is “on”. The current that flows in this manner is referred to as Channel Current. The ZXM66P02N8TA also features a fast switching speed and good thermal performance. This makes it suitable for high frequency applications such as switching regulators, power supplies, motor control, and display systems. In conclusion, the ZXM66P02N8TA is a dual MOSFET transistor suitable for use in applications that require high power handling. It is ideal for use in applications such as motor and lighting control, overload protection, gate drivers and power management in consumer, automotive, and industrial applications. It operates by allowing current to flow through the MOSFET when it is “on” and preventing current from flowing when it is “off”. It also features a fast switching speed and good thermal performance.

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