ZXM61P03FTC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXM61P03FTC is a dynamically-enhanced, ultra-low RDS(on) single N-channel MOSFET. As one of the most commonly used FET components, N-Channel MOSFETs are used in a variety of different applications, ranging from power manipulation, circuit protection to signal enhancement. The ZXM61P03FTC is designed to help meet the demands of these complex applications by improving speed and power efficiency.

The ZXM61P03FTC is a Surface Mounted Device (SMD) device with a static drain-source breakdown voltage of 30V and a continuous drain current of 3A. It has a typical gate threshold voltage of 1.8V and a maximum gate source voltage of 5V. In addition, it has a fast switching speed and low gate charge, with a maximum drain-source on-state resistance of 30mOhm and a total gate charge of 13nC. This FET has an excellent breakdown voltage, low on-resistance, and fast switching speeds, making it an ideal choice for high-power applications.

The ZXM61P03FTC’s working principle is based on the transfer of electrons between its source and drain terminal. When a voltage greater than the gate threshold voltage is applied to the gate terminal, electrons are transferred between the source and drain, thereby creating a conductive path between the two. This, in turn, allows current to flow between the source and drain when a voltage is applied to the drain and source. This conductive path causes the resistance between the source and drain to decrease, resulting in improved power efficiency.

The ZXM61P03FTC is well suited for various power applications, such as switching power supplies, voltage regulators and motor drives. It is also suitable for use in signal enhancement applications, such as audio and video amplifiers, due to its fast switching speeds and low gate charge. In addition, the ZXM61P03FTC’s high breakdown voltage, low on-resistance, and fast switching speeds make it an ideal choice for high-performance power supplies and other power management applications.

Overall, the ZXM61P03FTC is a FET that is ideally suited for a variety of power and signal enhancement applications. Its static drain-source breakdown voltage of 30V and continuous drain current of 3A, coupled with its fast switching speed, low gate charge, and low on-resistance, set it apart from other FET components. Furthermore, its high breakdown voltage and low on-resistance makes it perfect for use in high-performance power supplies and other power management applications.

The specific data is subject to PDF, and the above content is for reference