ZXM66P03N8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM66P03N8TR-ND |
Manufacturer Part#: |
ZXM66P03N8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 7.9A 8-SOIC |
More Detail: | P-Channel 30V 6.25A (Ta) 1.56W (Ta) Surface Mount ... |
DataSheet: | ZXM66P03N8TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1979pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.56W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
>The ZXM66P03N8TA is a transistor component made by Zetex and belongs to the class of field effect transistors (FETs) with a single MOSFET configuration. It is an N-channel enhancement mode transistor with an ultra-low on-resistance of 66 mΩ and 10 mA of maximum gate current. This component is ideal for applications that require a high level of electrical efficiency and performance, such as those requiring power management. >The ZXM66P03N8TA is typically used in power management applications, as it is capable of providing high efficiency and power density. The component can be used as a switch or a regulator in power supply designs. It has a low on-resistance of 66mΩ, which helps to reduce power losses, and it operates with a maximum drain voltage of 10 V and a maximum drain current of 70 A. >The working principle of the ZXM66P03N8TA is based on charge transfer from the gate to the source of the device. When the gate of the transistor is charged, an electric field is created between the source and the gate, which causes the source to become negatively charged. This, in turn, creates a voltage difference across the drain and source, which is what allows the device to conduct electricity. In addition, the gate of the device allows for the adjustment of the voltage, current or power levels by controlling the gate\'s voltage. >The ZXM66P03N8TA is mainly used in high-power applications, where its high efficiency and performance are essential. It is also used in power management applications, as it can be used to regulate the voltage and current of a power supply design. Other possible applications for this component include automotive, consumer electronics and computers. >Overall, the ZXM66P03N8TA is an ideal component for high-power applications requiring reliable performance and energy efficiency. Its low on-resistance of 66mΩ allows for power losses to be kept to a minimum, and its adjustable gate allows for voltage, current or power levels to be adjusted as needed. Moreover, it can be used in a wide range of applications, such as automotive, consumer electronics and computers.
The specific data is subject to PDF, and the above content is for reference
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