ZXM64N035GTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	35V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Ta), 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	50 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223
Package / Case:	TO-261-4, TO-261AA

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Introduction to ZXM64N035GTAThe ZXM64N035GTA is a type of FETs, MOSFETs – single. It is a P-Channel enhancement mode field effect power transistor with high power and current handling capability. Developed by the Toshiba Semiconductor and Storage Corporation, the ZXM64N035GTA is capable of operating at a power range of -50V to -200V, and maximum drain to source voltage of -200V, drain current of -35A, drain-source on-state resistance of 74 mΩ, gate charge of 19.1 nC, maximum drain efficiency of 0.8 and an operating temperature range of -55C to 175C. It has a gate threshold voltage of 2.2V, which makes it best suited for low level power MOSFETs applications. Application Field of ZXM64N035GTAThe ZXM64N035GTA is widely used in various applications, such as power supply, motor controller, switching regulator, rectifiers, amplifier and other industrial applications. It can also be employed in circuits that require high-speed switching and low power consumption.The ZXM64N035GTA can be used in low voltage power circuits, offering the designer a device with excellent transconductance, high switching speed and low on-resistance. Thus, it can be used in various DC/DC converters, simple power amplifiers, load switching, low noise amplifiers, multiplexers, power factor rectification systems and other power supply applications.Working Principle of ZXM64N035GTAThe working principle of the ZXM64N035GTA is similar to that of other FETs, MOSFETs. A voltage applied to the gate of the device creates an electric field which modulates the conductivity of the channel, thereby controlling the flow of electrons between the source and the drain. This allows the FET to act as a switch and control the flow of current in an electrical system.The ZXM64N035GTA has a high transconductance, enabling it to switch high frequency signals with minimal noise. Additionally, its low on-state resistance allows it to handle large amounts of current with minimal loss. Due to its special design construction, it can obtain higher switching speeds and offer higher system efficiency than other similar devices.Due to its excellent performance characteristics and wide range of applications, the ZXM64N035GTA is an excellent choice for systems that require high speed and low power consumption. It is also suitable for many other power applications.

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