ZXM64P03XTA Discrete Semiconductor Products

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The ZXM64P03XTA is a high-performance N-channel enhancement mode power metal–oxide–semiconductor field-effect transistor (MOSFET) produced by Diodes Incorporated. It is a vertical double-diffused metal–oxide–semiconductor field-effect transistor (DMOSFET) designed for use in power switching applications.

The ZXM64P03XTA is an N-channel MOSFET, meaning it is composed of two p-type materials and one n-type material in its construction. When a positive voltage is applied to the gate, the electrons within the n-type material are repelled and form an electrostatic field between the p-type material and the n-type material. This creates a small depletion region, where no current can flow. This small depletion region is known as the "gate-to-source" region, or the "threshold voltage" region.

The ZXM64P03XTA is primarily used in power switching applications such as motor control, power factor correction, and DC-to-DC converters. It is also well-suited for other applications that require a low on-state resistance, high speed switching, and low gate charge. It has a maximum drain-source voltage (Vds) of 600V and a maximum drain current of 64A. The maximum on-state resistance (Rds) is rated at 0.006Ω, making it an excellent choice for high-efficiency power management applications.

The ZXM64P03XTA features a number of features designed to maximize performance and reliability. For instance, its high-speed switching capabilities make it well-suited for frequency-sensitive systems, such as supercharged systems. This MOSFET also features a reverse-recovery-diode function that significantly reduces switching losses. This MOSFET also features an embedded temperature sensor, which can be used to detect critical operating temperatures and thus help protect delicate circuits from over-voltage or over-current conditions.

The ZXM64P03XTA is a general-purpose MOSFET and can be used in many applications. It is compatible with a variety of gate drive circuits and can be used in both AC and DC circuits. The maximum gate charge (Qg) is rated at 90nC, making it suitable for high-current switching applications. Furthermore, the ZXM64P03XTA has a maximum thermal resistance (Rth) of 1.45K/W, making it an excellent choice for applications requiring thermal management.

In conclusion, the ZXM64P03XTA is a high-performance N-channel enhancement mode power MOSFET. It is ideal for applications requiring fast switching, low-on resistance, and low gate charge. It is also suitable for high-current applications, as it features a high-speed switching capability and an embedded temperature sensor. Furthermore, this MOSFET has a low thermal resistance rating and a maximum drain-source voltage of 600V, making it an excellent choice for power management applications.

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