ZXM61P03FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM61P03FTR-ND |
Manufacturer Part#: |
ZXM61P03FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 1.1A SOT23-3 |
More Detail: | P-Channel 30V 1.1A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXM61P03FTA Datasheet/PDF |
Quantity: | 39000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 600mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXM61P03FTA is a power MOSFET that belongs to a family of low-threshold voltage components and is designed specifically for use in high-speed switching applications.
This MOSFET features an incredibly low on-resistance rating of just 4.7 mΩ and a very low threshold voltage of -1.6V. It is available in a TO-220AB package, making it ideal for use in small spaces.
The ZXM61P03FTA is a voltage-controlled device, meaning that it is operated based on the voltage applied to the gate. This feature makes it highly reliable and efficient compared to its counterparts.
This MOSFET is used in a variety of applications, such as audio amplifiers, switching power supplies, motor control, battery-operated devices, and disinfection equipment. It is also used in off-line and DC-to-DC power converters, and in resonant DC to DC converters for solar and alternative energy systems.
The ZXM61P03FTA uses a unique technology that enables it to operate at higher frequencies without performance degradation. This feature makes it suitable for high-speed switching applications.
The working principle of this MOSFET is based on the MOSFET\'s ability to control the flow of electrons between the drain and the source of the component. As the gate voltage is increased or decreased, the resistance changes between the drain and the source. This results in the control of the current flow through the component. As the gate voltage is increased, the drain and source currents increase, while as it is decreased, they decrease.
In addition to its high performance, the ZXM61P03FTA is also highly reliable. It is designed with a low leakage current and a high-temperature operation up to +150°C junction temperature, making it suitable for applications that require high power.
The ZXM61P03FTA is a powerful and reliable component, making it an excellent choice for high-speed switching applications and power-related applications. Its low-threshold voltage and fast switching characteristics make it a great choice for a variety of applications. Whether you’re looking for power or reliability, the ZXM61P03FTA is the perfect choice.
The specific data is subject to PDF, and the above content is for reference
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