Allicdata Part #: | ZXM66P02N8TC-ND |
Manufacturer Part#: |
ZXM66P02N8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 6.4A 8SOIC |
More Detail: | P-Channel 20V 6.4A (Ta) 1.56W (Ta) Surface Mount 8... |
DataSheet: | ZXM66P02N8TC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 43.3nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 2068pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.56W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The ZXM66P02N8TC is a type of field-effect transistor (FET) that is specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of FET, also widely known simply as a MOSFET, is a three-terminal device with a gate, drain, and source that operates with the help of an electric field. Its basic operation consists of two active regions of operation: enhancement and depletion. The common applications of MOSFETs, and the ZXM66P02N8TC in particular, include power switching, signal amplifying, and switching speed/current control.
In terms of its basic working principle, the ZXM66P02N8TC begins operating with voltage applied between the gate and source terminal. This causes a negative charge to accumulate on the semiconductor close to the gate and the electric field formed by the negative charge depletes current carriers from the channel. The current carriers are literally driven away from the gate and the depletion region of the semiconductor region increases as the electric field becomes stronger. As a result, this creates a large resistance between source and drain within the MOSFET, blocking the current from flowing from source to drain.
The control of the drain-source current is accomplished by the gate-source voltage, which is commonly changed to either increase or decrease the voltage threshold. This is why MOSFETs are said to possess current-sensitive gates. The ZXM66P02N8TC can also be utilized to create buffer or active power circuits, allowing the flow of current through only when there is a high-level input signal present.
In terms of its applications, the ZXM66P02N8TC is commonly used to increase the performance of many audio amplifiers, pedal boards and other audio devices. It is also used in many home and professional audio systems, as it provides excellent protection from noise. Additionally, it can be effectively used in switching and power distribution applications. For example, the ZXM66P02N8TC is perfectly suited for use in automatic switches, electric vehicle onboard chargers, high-frequency switching power supplies and server power systems.
The ZXM66P02N8TC is also used for wireless and wireless-communication systems. It is highly effective for applications such as satellite transceivers and wireless base stations, due to its low noise and high-speed switching capabilities. Furthermore, it is also commonly used in electronic systems for its low power consumption.
In short, the ZXM66P02N8TC is a type of MOSFET that is designed for multiple applications in audio amplification, switching, power distribution, and wireless communications. It is a high-performance FET that offers excellent protection against noise and low power consumption. As a result, the ZXM66P02N8TC offers a wide range of practical applications and is highly sought-after in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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