ZXM61P02FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM61P02FTR-ND |
Manufacturer Part#: |
ZXM61P02FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 0.9A SOT23-3 |
More Detail: | P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount ... |
DataSheet: | ZXM61P02FTA Datasheet/PDF |
Quantity: | 99000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 610mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXM61P02FTA is a type of field-effect transistor (FET) designed for applications in power circuits. It is a normally-on type enhancement-mode FET and is constructed with an n-channel silicon gate. This FET can be used to regulate currents in circuits, as it is capable of switching large currents and voltages without the need for much power when it is enabled.
The ZXM61P02FTA has a simple on/off switch, which allows it to be connected to a power source and then turned on when it is required. This type of FET is best suited for applications where the load resistance is relatively low or high, as the power dissipated will be low in those cases. It is a good choice for power management applications, as it can handle large currents and voltages efficiently.
The working principle of the ZXM61P02FTA is based on the fact that when a positive voltage is applied to the gate of the FET, an electric field is created that attracts electrons from the source to the drain terminal of the FET. This is known as an enhancement-mode FET, as the drain current increases with increasing gate voltage. When the gate voltage is reduced, the field created by the gate is weakened, and electrons are more likely to move away from the gate, thus reducing the drain current.
In terms of application fields, the ZXM61P02FTA is typically used in power management circuits, such as in power supply circuits, as its main purpose is to regulate currents and voltages in such circuits. It can also be used in motor control applications, as it can be used to control the speed and direction of motors. The FET can also be used in switching applications, as it can be used to switch large amounts of current and voltage without the need for much power.
In summary, the ZXM61P02FTA is a type of FET designed for applications in power circuits. It is a normally-on type enhancement-mode FET and is constructed with an n-channel silicon gate. It is best suited for applications where the load resistance is relatively low or high and is widely used in power management applications, motor control applications, and switching applications. Its working principle is based on the fact that when a positive voltage is applied to the gate of the FET, an electric field is created that attracts electrons from the source to the drain terminal of the FET, thereby allowing current to be regulated.
The specific data is subject to PDF, and the above content is for reference
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