ZXM61N03FTA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXM61N03FTA is a P-Channel MOSFET, or Metal Oxide Silicon Field-Effect Transistor, built on a single chip. Developed by ON Semiconductor, the ZXM61N03FTA is designed to be a high-performance transistor capable of providing reliable switching performance and efficient heat dissipation. The device is ideal for a variety of applications, such as motor control, power management, and power switching.

The ZXM61N03FTA is a standard level FET device, with an enhancement mode operation. It is available in an SOT-223 package, providing excellent thermal characteristics and allowing for a compact design. The device features low on-state resistance (RDS(ON)) and high-voltage capability. The maximum drain source voltage rating is 30V and maximum drain current rating is 8A. It operates with a maximum junction temperature of 175°C and has a maximum power dissipation of 1.5W.

The working principle of a MOSFET is based on the concept of a depletion region in a PN junction. In a MOSFET, the gate region lies between the source and drain, which form a PN junction. The gate voltage is applied, creating a strong electric field which charges the gate oxide and weakens the depletion region. This allows for current to flow between the source and drain, thus switching the device on.

MOSFETs are incredibly versatile and are used in a variety of applications, such as power switching and motor control. MOSFETs are used to control current and voltage with relatively low power input and high efficiency. They are also used in power management systems to provide over- or under-voltage protection. Furthermore, because of their relatively low on-state resistance, they are suitable for high-efficiency, low-noise amplifiers.

The ZXM61N03FTA is a standard level FET device which is ideal for various applications. It features low on-state resistance, high-voltage ratings, and an excellent thermal performance. The device is designed for reliable switching and efficient heat dissipation, making it ideal for motor control and power switching applications. The device is also versatile, being suitable for use in power management systems and high-efficiency, low-noise amplifiers.

The specific data is subject to PDF, and the above content is for reference