ZXM64N02XTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM64N02XTR-ND |
Manufacturer Part#: |
ZXM64N02XTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 5.4A 8-MSOP |
More Detail: | N-Channel 20V 5.4A (Ta) 1.1W (Ta) Surface Mount 8-... |
DataSheet: | ZXM64N02XTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MSOP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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The ZXM64N02XTA is a high-performance Power MOSFET device with a low on-resistance ratio and a high operating temperature range. It is designed for use in applications requiring high power output, including high-temperature operation up to 175°C. This MOSFET device is commonly used in various high-power, high-temperature applications, such as laptop computers, automotive electrical systems, and industrial machinery.
The ZXM64N02XTA is a single N-channel MOSFET. It is constructed from an oxide/silicon substrate with N-channel source, drain, and gate electrodes embedded in the substrate. The device can handle large amounts of current and voltage, making it well-suited for high-power applications. The on-resistance ratio of the device is lower than that of other MOSFET devices, allowing it to dissipate more heat while maintaining a lower threshold voltage. The high-temperature operating range enables the device to operate in harsh environments.
The ZXM64N02XTA operates based on the principle of the MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. The device is a three-terminal, non-linear device, meaning it requires a signal voltage to be applied to its gate terminal in order to control its operation. The signal voltage is used to modulate the conductivity of the channel between the source and drain electrodes. When a positive voltage is applied to the gate terminal, the channel is opened, allowing current to flow from source to drain. When the signal voltage is reduced, the channel is closed, and current does not flow. This type of device is well-suited for controlling the flow of high currents, as the gate voltage can be controlled with a small signal voltage.
The ZXM64N02XTA is used in a wide range of high-power applications, including power supplies and DC-DC converters. It is also used in other applications, such as office equipment, industrial machinery, communications systems, and robotics. The device’s low-resistance and high-temperature operating range make it well-suited for these applications. Additionally, the device’s small size and light weight make it ideal for use in portable electronic devices.
The ZXM64N02XTA is a versatile and reliable MOSFET device. Its low on-resistance ratio and high-temperature operating range make it suitable for use in many high-power, high-temperature applications. Additionally, its small size and light weight make it a good choice for use in portable devices. The device’s operation is based on the principle of the MOSFET, which makes it an ideal choice for controlling large currents with a small signal voltage.
The specific data is subject to PDF, and the above content is for reference
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