18v logic receiver - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TN2501N8-G-ND	TN2501N8-G	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 18V Current - Continuous Drain (Id) @ 25C: 400mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 3V Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 200mA, 3V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Power Dissipation (Max): 1.6W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	1000 Order	--
SCT3030KLGC11-N D	SCT3030KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $35.4753
SCT3080KLGC11-N D	SCT3080KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 800V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $7.6545
SCT2160KEC-ND	SCT2160KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208 mOhm @ 7A, 18V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1 Order	1+: $10.5525 10+: $9.5924 25+: $8.8729 100+: $8.1535 250+: $7.4341
SCT3022ALGC11-N D	SCT3022ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V Power Dissipation (Max): 339W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $26.5104
SCT3030ALGC11-N D	SCT3030ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	1000 Order	1+: $15.5736
SCT2080KEC-ND	SCT2080KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	5213 Order	1+: $82.08
SCT2450KEC-ND	SCT2450KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V Vgs(th) (Max) @ Id: 4V @ 900A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V Power Dissipation (Max): 85W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	15 Order	1+: $6.0291 10+: $5.4281 25+: $4.9458 100+: $4.4633 250+: $4.1014 500+: $3.7395
SCT3120ALGC11-N D	SCT3120ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156 mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V Power Dissipation (Max): 103W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $3.7107
SCT2120AFC-ND	SCT2120AFC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $9.8532 10+: $8.9548 25+: $8.2832 100+: $7.6116 250+: $6.94
SCT2280KEC-ND	SCT2280KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 364 mOhm @ 4A, 18V Vgs(th) (Max) @ Id: 4V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 667pF @ 800V Power Dissipation (Max): 108W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	978 Order	1+: $7.623 10+: $6.8626 25+: $6.2529 100+: $5.6428 250+: $5.1853 500+: $4.7277
SCT2H12NYTBTR-N D	SCT2H12NYTB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 410A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 44W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	15 Order	400+: $2.6673
SCT3160KLGC11-N D	SCT3160KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208 mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V Power Dissipation (Max): 103W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $3.8871
SCT3080ALGC11-N D	SCT3080ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V Power Dissipation (Max): 134W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $7.5159 10+: $6.7649 25+: $6.1637 100+: $5.5623 250+: $5.1113 500+: $4.6604
SCT3040KLGC11-N D	SCT3040KLGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $16.5375
SCT2H12NZGC11-N D	SCT2H12NZGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 900A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 35W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	15 Order	1+: $4.5297 10+: $4.0755
SCT3060ALGC11-N D	SCT3060ALGC11	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V Power Dissipation (Max): 165W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	15 Order	1+: $6.5205
SCT2750NYTBTR-N D	SCT2750NYTB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 975 mOhm @ 1.7A, 18V Vgs(th) (Max) @ Id: 4V @ 630A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 800V Power Dissipation (Max): 57W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	15 Order	400+: $3.123
SCH2080KEC-ND	SCH2080KEC	ROHM Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V Power Dissipation (Max): 262W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	15 Order	1+: $27.3168 10+: $25.2649 25+: $23.2165 100+: $21.5778
NTP8G202NGOS-ND	NTP8G202NG	ON Semiconductor	View more Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id: 2.6V @ 500A Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $13.4016
497-16301-2-ND	STD28P3LLH6AG	STMicroelectronics	View more Series: Automotive, AEC-Q101, STripFET H6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Power Dissipation (Max): 33W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2637
ZVN2106GTR-ND	ZVN2106GTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 710mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	4000 Order	--
TPH3202LS-ND	TPH3202LS	Transphorm	View more Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	17 Order	1+: $7.9695 10+: $7.1726
497-6551-2-ND	STB36NF06LT4	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power Dissipation (Max): 70W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	2000+: $0.4159
ZVP2106ASTOA-ND	ZVP2106ASTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
497-7954-2-ND	STB85NS04Z	STMicroelectronics	View more Series: SAFeFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 215W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
ZVP3306FTC-ND	ZVP3306FTC	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Power Dissipation (Max): 330mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TPH3206LSB-ND	TPH3206LSB	Transphorm	View more Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V Vgs(th) (Max) @ Id: 2.6V @ 500A Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V Power Dissipation (Max): 81W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	348 Order	1+: $8.2593 10+: $7.4334 60+: $6.7726 120+: $6.1119 300+: $5.6163 540+: $5.1208
ZVP3306ASTOB-ND	ZVP3306ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVN2106ASTZ-ND	ZVN2106ASTZ	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	--
ZVP2106ASTB-ND	ZVP2106ASTZ	Diodes Incorporated	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	2000 Order	--
497-7522-5-ND	STP36NF06L	STMicroelectronics	View more Series: STripFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power Dissipation (Max): 70W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2383 Order	1+: $1.0647 10+: $0.9431 100+: $0.7455 500+: $0.5782 1000+: $0.4564
ZVP2106ASTOB-ND	ZVP2106ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	--
TPH3205WSBQA-ND	TPH3205WSBQA	Transphorm	View more Series: Automotive, AEC-Q101 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 22A, 8V Vgs(th) (Max) @ Id: 2.6V @ 700A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	907 Order	1+: $17.766 10+: $16.4323 30+: $15.1001 120+: $14.0342
TPH3206LDB-ND	TPH3206LDB	Transphorm	View more Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V Vgs(th) (Max) @ Id: 2.6V @ 500A Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V Power Dissipation (Max): 81W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 4-PowerDFN	1000 Order	60+: $6.7726
ZVN2106ASTOB-ND	ZVN2106ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
TPH3206LS-ND	TPH3206LS	Transphorm	View more Packaging: Tube Part Status: Last Time Buy FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id: 2.6V @ 500A Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	191 Order	1+: $8.2593 10+: $7.4334 60+: $6.7726 120+: $6.1119
TPH3212PS-ND	TPH3212PS	Transphorm	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 72 mOhm @ 17A, 8V Vgs(th) (Max) @ Id: 2.6V @ 400uA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 400V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	591 Order	1+: $10.584 10+: $9.6214 25+: $8.8999 100+: $8.1782 250+: $7.4565
TPH3208PS-ND	TPH3208PS	Transphorm	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Vgs(th) (Max) @ Id: 2.6V @ 300A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Vgs (Max): 18V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	179 Order	1+: $7.8246 10+: $7.0421 25+: $6.4162 100+: $5.7902 300+: $5.3207 600+: $4.8513
C3M0280090D-ND	C3M0280090D	Cree/Wolfspeed	View more Series: C3M Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	996 Order	1+: $2.2932

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