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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SSM6N48FURFCT-N D	SSM6N48FU,RF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
SSM6N48FURF(D-N D	SSM6N48FU,RF(D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
917-1185-2-ND	EPC2105	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.5149
917-EPC2108ENGR TR-ND	EPC2108ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	2500 Order	2500+: $0.5771
917-1169-2-ND	EPC2108	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.5771
917-1174-2-ND	EPC2111	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	22500 Order	--
917-EPC2107ENGR TR-ND	EPC2107ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	1000 Order	5000+: $0.5839
917-EPC2111ENGR TR-ND	EPC2111ENGRT	EPC	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	6000 Order	1000+: $1.1157
917-1168-2-ND	EPC2107	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100A, 2.5V @ 20A Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	17500 Order	2500+: $0.6064
917-1181-2-ND	EPC2101	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	10000 Order	500+: $3.4588
CSD86336Q3D-ND	CSD86336Q3D	Texas Instruments	View more Series: NexFET Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250A, 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	1000 Order	--
CSD86356Q5D-ND	CSD86356Q5D	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	1000 Order	--
296-49071-2-ND	CSD86356Q5DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	500 Order	250+: $1.3693 500+: $1.1982 750+: $1.0818 1250+: $0.9927
296-49054-2-ND	CSD86336Q3DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250A, 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	500 Order	250+: $0.8738 500+: $0.7645 750+: $0.6903 1250+: $0.6335
ALD1110ESAL-ND	ALD1110ESAL	Advanced Linear Devices Inc.	View more Series: EPAD Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10V Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 600mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	1000 Order	50+: $2.7549
1014-1048-ND	ALD1117PAL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	1000 Order	1+: $2.0412 10+: $1.8459 100+: $1.4834 500+: $1.1538 1000+: $0.956
1014-1011-ND	ALD1105SBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	102 Order	1+: $2.1735 10+: $1.9379 100+: $1.5892 500+: $1.2869 1000+: $1.0853
917-1110-2-ND	EPC2106	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	14000 Order	--
917-EPC2103ENGR TR-ND	EPC2103ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	5000 Order	500+: $3.4812
1727-2469-2-ND	BUK9K5R6-30EX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Power - Max: 64W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	1000 Order	1500+: $0.4233
1014-1010-ND	ALD1105PBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	454 Order	1+: $2.1735 10+: $1.9379 100+: $1.5892 500+: $1.2869 1000+: $1.0853
1014-1009-ND	ALD1103SBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25C: 40mA, 16mA Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10A Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	100 Order	1+: $3.3264 10+: $2.9705 100+: $2.4358 500+: $1.9724 1000+: $1.6635
SSM6N357RLFTR-N D	SSM6N357R,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	1000 Order	3000+: $0.1011
917-EPC2104ENG- ND	EPC2104ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
917-EPC2102ENG- ND	EPC2102ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
1727-1898-2-ND	BUK9K134-100EX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.5A Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 32W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	1500 Order	--
917-EPC2105ENG- ND	EPC2105ENG	EPC	View more Series: eGaN Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
XN0187200LTR-ND	XN0187200L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Vgs(th) (Max) @ Id: 3.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 300mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: Mini5-G1	1000 Order	1+: $0
917-EPC2106ENGR TR-ND	EPC2106ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600A Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	17500 Order	2500+: $0.5477
917-EPC2110ENGR TR-ND	EPC2110ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Common Source FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700A Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	12500 Order	2500+: $0.714
917-EPC2103ENG- ND	EPC2103ENG	EPC	View more Series: eGaN Packaging: Tray Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
ALD1102BPAL-ND	ALD1102BPAL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10A Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	1000 Order	50+: $2.9832
1014-1012-ND	ALD1106PBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	674 Order	1+: $2.1735 10+: $1.9379 100+: $1.5892 500+: $1.2869 1000+: $1.0853
917-1183-2-ND	EPC2103	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 28A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4812
ALD1108ESCL-ND	ALD1108ESCL	Advanced Linear Devices Inc.	View more Series: EPAD Packaging: Tube Part Status: Active FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10V Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V Power - Max: 600mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	1000 Order	50+: $2.4289
1014-1014-ND	ALD1107PBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1A Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	208 Order	1+: $2.1735 10+: $1.9379 100+: $1.5892 500+: $1.2869 1000+: $1.0853
1014-1008-ND	ALD1103PBL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25C: 40mA, 16mA Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10A Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	294 Order	1+: $3.3264 10+: $2.9705 100+: $2.4358 500+: $1.9724 1000+: $1.6635
917-1182-2-ND	EPC2102	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	9500 Order	500+: $3.4363
917-EPC2101ENGR TR-ND	EPC2101ENGRT	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	7000 Order	500+: $3.4588
1014-1000-ND	ALD1101APAL	Advanced Linear Devices Inc.	View more Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10A Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0C ~ 70C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	1000 Order	50+: $3.6841

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