SSM6N48FU,RF

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Discontinued at Digi-Key
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	100mA
Rds On (Max) @ Id, Vgs:	3.2 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	15.1pF @ 3V
Power - Max:	300mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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SSM6N48FU RF Application Field and Working PrincipleSSM6N48FU, an industry-leading RF power switching device, is used in a wide range of applications such as wireless communication and satellite systems. It is capable of providing consistent, reliable performance in situations where other components such as MOSFETs and IGBTs fail. The device is also designed to be compact and lightweight, allowing manufacturers to reduce power consumption and save on manufacturing costs.The SSM6N48FU is based on a field-effect transistor (FET) design which utilizes Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. This technology allows the device to control the current flow in the device and therefore regulate power. The basic structure of a MOSFET consists of three layers, a gate, a source, and a drain. Each layer is controlled by a voltage applied to the gate and works together to control the on/off operation of the device.Unlike conventional transistors, MOSFETs require a low power drive to activate them, which helps to reduce power consumption and increase efficiency. The SSM6N48FU uses two distinct types of metal oxide semiconductor transistors (MOSFETs): metal-insulator-semiconductor (MIS) FETs and metal-oxide-semiconductor (MOS) FETs. The MIS structure is composed of a metal gate, a silicon oxide insulator, and a semiconductor, while the MOS structure utilizes a metal oxide which separates the two electrodes (source and drain).In addition to its low power drive, the SSM6N48FU is capable of handling higher voltage variations without significant loss in performance. This helps to reduce the size of the circuit while also eliminating the need for an additional power supply.The SSM6N48FU uses a variety of features such as improved gate drive, high speed switching, and thermal protection to ensure reliable and consistent performance. The device is also designed to be noise and interference immune, allowing it to be used in a variety of RF and wireless communications environments.The SSM6N48FU offers excellent thermal and electrical management features, which helps to minimize losses and maximize system efficiency. Its high power handling capacity also makes it ideal for use in mobile communications, satellite systems, as well as industrial and automotive applications.Overall, SSM6N48FU is a highly reliable and efficient device which provides both high performance and cost-effectiveness. Its low power drive, combined with its robust design, makes it the ideal solution for a wide range of RF application fields.

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