IRF7807D2PBF

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IRF7807D2PBF is a single N-Channel MOSFET from International Rectifier (IR). Specifically, it is a HEXFET Power MOSFET used for applications such as general purpose, power management, motor control, and automotive. With this device, users can take advantage of the maximum switching speed, and low on-resistance of MOSFET’s.

Features of the IRF7807D2PBF include its drain-source breakdown voltage (BVdss) of 60V, drain-source on-resistance (Rds(on)) of 1.63Ohm (@Vgs of 10V), gate-source threshold voltage (Vgs(th)) of 3.2V, gate-drain charge Qg of 17.9nC, and continuous drain current of 149A (TC = 25°C).

An important feature of the IRF7807D2PBF is its low drain-source on-resistance (Rds(on)). Rds(on) is the resistance between the drain and source when Vgs, the gate-to-source voltage, is at the threshold voltage. The lower the Rds(on), the better the performance of the MOSFET. The IRF7807D2PBF offers high performance with an Rds(on) of 1.63 Ohm at Vgs of 10V.

The IRF7807D2PBF has a wide range of applications, including power management, motor control, and automotive. In power management applications, it is used as a high-speed switch because it can handle high currents up to 149A. In motor control and automotive applications, it can be used as a power switch or to control the speed of a motor. This is possible because of its excellent switching speed, low on-resistance, and wide voltage range.

The IRF7807D2PBF is single N-Channel MOSFET controlled by Gate-Source voltage. It is also an enhancement-mode MOSFET, which means it requires Gate-Source voltate to be slightly greater than 0V in order to be switched on, and the current flows easily through it in the on-state. This type of MOSFET is normally operated as either a switch or an amplifier. As a switch, it is a very efficient way to pass a large amount of current with little loss. As an amplifier, it can amplify the input signal both in terms of current and voltage. As such, it can be used for both power management and signal processing applications.

In conclusion, the IRF7807D2PBF is a single N-Channel MOSFET designed for use in a variety of applications, such as power management, motor control, and automotive. Its features include low on-resistance, wide voltage range, and high current capability. It is controlled by Gate-Source voltage and can be operated as either a switch or an amplifier. The IRF7807D2PBF is an excellent choice for applications that require high current and high speed switching, as well as low power consumption.

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