Allicdata Part #: | HUFA75639G3-ND |
Manufacturer Part#: |
HUFA75639G3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 56A TO-247 |
More Detail: | N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | HUFA75639G3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
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The HUFA75639G3 is a type of field-effect transistor, or FET for short, used for a variety of applications. It belongs to the MOSFET family of transistors, but it is a single type. This transistor is used extensively in a wide range of circuits, including precision amplifiers, digital logic, RF switching, and pulse-width modulation switching.
Before discussing the application fields and working principles of the HUFA75639G3, it is important to understand the different types of FETs. There are two main categories of FETs: junction field-effect transistors (JFETs) and metal-oxide field-effect transistors (MOSFETs). JFETs are devices composed of n-type and p-type semiconductor materials. The desired current flows in a channel between the n-type and the p-type materials, which is created by the application of an external voltage. On the other hand, MOSFETs are composed of both an n-type and a p-type material separated by an oxide layer, and the channel is modified by the application of an external voltage, rather than an externally-applied current.
The HUFA75639G3 is a MOSFET type device, and as such, it is a voltage-controlled device. It operates by means of two terminals, the source and the drain. When a voltage is applied between the source and drain, a small electric field is created within the transistor\'s gate. This electric field causes electrons to flow between the source and drain, thus allowing the device to function as a switch controlling the transistor\'s current output. This type of transistor is particularly useful for RF switching applications, due to its high speed and low power consumption.
The HUFA75639G3 is also used in precision amplifier applications, as it can provide extremely high gain with minimal distortion. It is also used in digital logic applications, due to its capability of producing a constant current output with a wide variety of input voltages and frequencies. Finally, this type of transistor is commonly used in pulse-width modulation (PWM) switching applications, as it is accurate and efficient at switching large amounts of power in a very short amount of time.
In addition to the applications listed above, the HUFA75639G3 is also used in a variety of other applications, including automotive electronics, home audio and video systems, and medical equipment. It is known for its reliable and efficient performance, making it an ideal choice for a wide range of applications.
The HUFA75639G3 is a versatile and reliable MOSFET type transistor that offers many advantages over its predecessors. Its voltage-controlled operation and wide variety of applications make it an invaluable component in many circuits. Its high gain, low power consumption and accurate switching performance make it suitable for a broad range of applications, ranging from digital logic to RF switching.
The specific data is subject to PDF, and the above content is for reference
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