ZXMN3B04N8TC

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The ZXMN3B04N8TC is a N-Channel enhancement mode field effect transistor (FET) with an integrated drain-source diode from Diodes Incorporated. This part is part of the Packaged SiFET family of MOSFETs and is used in a wide range of power management and other electronic applications.

The ZXMN3B04N8TC has a wide voltage range of 20 V to 360 V and is ideal for systems that require high current handling capabilities. It is available in a TO-252/D-Pak package, making it suitable for a variety of applications. This device is designed to work effectively in harsh environments and is ideal for applications where heavy capacitive loads, such as motors and other inductive loads, are used.

The ZXMN3B04N8TC is widely used in audio applications such as high-fidelity amplifiers, instrument amplifiers, and computer speaker systems. It is also used for systems that require high input impedance, such as digital power supplies, or systems with high di/dt noise immunity, such as VRM (Voltage Regulator Modules).

The device is also used in automotive systems, including automotive ECUs (Engine Control Units) and power train control modules. It is also used in systems that require high switching performance, such as active power converters, and voltage regulators.

The ZXMN3B04N8TC works on the principle of the field effect transistor. FETs use an electric field to change the conductivity of a semi-conductor material, and the ZXMN3B04N8TC is no exception. It is composed of two parts: the source and the drain. In the ZXMN3B04N8TC, the source is a negative voltage and the drain is a positive voltage. When a voltage is applied between the source and the drain, a certain amount of current flows between them. The amount of current that flows is determined by the size of the voltage applied and the characteristics of the material that the transistor is made of.

The ZXMN3B04N8TC also has an internal drain-source diode. This diode protects the FET from voltage spikes and other electrical transient events. When the voltage between the source and the drain is higher than the diode\'s breakdown voltage, the diode will start to conduct, allowing the excess voltage to be diverted away and preventing it from damaging the FET.

In summary, the ZXMN3B04N8TC is a single N-Channel enhancement mode FET from Diodes Incorporated. It has a wide voltage range, suitable for a variety of applications. It is also integrated with a drain-source diode to protect the FET from voltage spikes. This makes the ZXMN3B04N8TC an ideal choice for automotive, audio, and power management applications.

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