
ZXMN3A02N8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3A02N8TR-ND |
Manufacturer Part#: |
ZXMN3A02N8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 5.3A 8-SOIC |
More Detail: | N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The ZXMN3A02N8TA is a N-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor). It is designed to offer high speed switching performance and withstand a wide range of operating temperatures. In this article, we will discuss the ZXMN3A02N8TA’s application fields and its working principle.
The ZXMN3A02N8TA is designed for tone control, amplifier, power supply, and audio applications. It is an improvement on traditional transistor-based circuits because of its low power consumption, low noise, and remarkably high speed switching performance. The device also has an improved drain-source breakdown voltage and can withstand a wide range of operating temperatures.
The ZXMN3A02N8TA is also well-suited for high-speed applications, such as motor and solenoid control. It is also great for use in voltage level shifting, and buffering applications. In addition, the device is useful for current sensing due to the excellent drain-source breakdown characteristics of the device.
The working principle of the ZXMN3A02N8TA is similar to other MOSFETs. The ZXMN3A02N8TA operates with an input gate and output drain. The source is connected to the substrate, and the drain is connected to the load. A voltage applied to the gate will cause the drain-source voltage to decrease, resulting in increased current passing through the device. There is a wide range of gate biases, which can be used to adjust the amount of current passing through the device.
The ZXMN3A02N8TA has a very low gate to source capacitance, which is beneficial when using this MOSFET in high frequency applications. This allows the device to respond quickly and accurately to changes in the input signal. It also has excellent power efficiency and is able to operate at a variety of operating temperatures.
The ZXMN3A02N8TA also has low on-resistance, which provides excellent current carrying capability. This helps to reduce device heating, thereby increasing its lifetime. Its high-speed switching performance also makes it ideal for use in audio applications and can help reduce further power consumption.
In summary, the ZXMN3A02N8TA is an excellent choice for multiple applications due to its range of features. Its low power consumption, low noise, and high speed switching performance make it extremely attractive for a range of applications, while its on-resistance, gate-source capacitance, and breakdown voltage capabilities also make it a great choice. Its flexibility and wide temperature range make it a perfect device for use in a variety of applications.
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