Allicdata Part #: | HUFA75639S3S-ND |
Manufacturer Part#: |
HUFA75639S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 56A D2PAK |
More Detail: | N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²... |
DataSheet: | HUFA75639S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.HUFA75639S3S Application Field and Working Principle
HUFA75639S3S is classified as a single Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is composed of a back-bias insulated-gate, a MOSFET channel, and a substrate, typically silicon. HUFA75639S3S is designed to function as a switch, amplifier, regulator, and amplifier. The main feature of this type of transistor is that it is easily controlled by applying a small voltage to its gate as it does not require any power for operation.
Field of Application
HUFA75639S3S typically finds application in a variety of miniaturized applications such as personal computers, communication systems, portable devices, and automobiles where a single transistor serves as the switching means. Its low voltage drives and high-speed switching characteristics make it an ideal choice for these applications.
The HUFA75639S3S can also be used in display driver applications such as LCD/EL/OLED. It finds a wide range of other applications in low power and portable electronics, AC/DC power control, dimming lighting systems, home appliances, and industrial safety monitoring.
Working Principle
The HUFA75639S3S field effect transistor works by applying a voltage to its gate. This voltage turns on a drain or a MOSFET channel that is connected between the source and drain. When the channel is turned on, current can flow from the drain to the source, and voltage on the source to the drain can be controlled through the gate, allowing for variable current flow.
The HUFA75639S3S is classified as an enhancement-mode type of device, meaning that in order for the current to flow, an increased gate voltage must be applied. As the gate voltage increases, the threshold voltage is exceeded and the required source-to-drain current starts flowing. Any further increase in the gate voltage causes an increase in the source drain current.
The advantage of using a MOSFET over a traditional transistor is that the MOSFET behaves like a resistor while the traditional transistor behaves like an amplifier. This is because the MOSFET uses an applied voltage to control the current flow between the drain and the source. This allows the current to be easily controlled, making it ideal for use as a switch, amplifier, and regulator.
When a small input signal is applied to the gate, a larger output can be obtained. This is due to the internal capacitance of the MOSFET. The internal capacitance of the MOSFET can be used to increase or decrease the gain or to reduce the distortion in the output signal. This makes it ideal for use in signal processing processes.
The specific data is subject to PDF, and the above content is for reference
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