ZXMN3A02X8TC Allicdata Electronics
Allicdata Part #:

ZXMN3A02X8TC-ND

Manufacturer Part#:

ZXMN3A02X8TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 5.3A 8MSOP
More Detail: N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-...
DataSheet: ZXMN3A02X8TC datasheetZXMN3A02X8TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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ZXMN3A02X8TC is a single-channel N-channel enhancement-mode field-effect transistor designed for use in low-voltage and low-current applications. This device combines high threshold voltage, fast switching speeds and low on-resistance together, making it ideal for high performance circuits and power management. The device has the standard TO-252 (DPAK) plastic package.

The ZXMN3A02X8TC application field primarily includes any low-voltage and low-current circuits. Such applications include level shifter circuit, linear regulator, power switch circuit, power supply, motor driving, switching regulators, and so on.

The working principle of the ZXMN3A02X8TC is very simple. It is a voltage-controlled device that relies on transistor action to provide electrical switching between source and drain terminals. That is, when the gate-source voltage is applied, the current flows from the source to the drain. The low on-resistance makes the ZXMN3A02X8TC ideal for use in low voltage and low current circuits as it reduces power loss and improves system efficiency.

The ZXMN3A02X8TC is also designed with fast switching speeds and high threshold voltage. This allows the device to meet the switching requirements of high performance circuits. It also reduces the amount of power consumed by the device, thereby reducing heat generation.

The ZXMN3A02X8TC also features protection against electrostatic discharge (ESD). The device is designed to withstand an ESD pulse up to 2kV, which makes it suitable for use in handheld devices.

In conclusion, the ZXMN3A02X8TC is a single-channel N-channel enhancement-mode field-effect transistor designed for use in low-voltage and low-current applications. It combines high threshold voltage, fast switching speeds and low on-resistance together, making it ideal for high performance circuits and power management. The protection against electrostatic discharge makes the device suitable for use in handheld devices. This device is thus an excellent choice for any low-voltage and low-current circuits.

The specific data is subject to PDF, and the above content is for reference

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