Allicdata Part #: | ZXMN3A02X8TC-ND |
Manufacturer Part#: |
ZXMN3A02X8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 5.3A 8MSOP |
More Detail: | N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-... |
DataSheet: | ZXMN3A02X8TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26.8nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MSOP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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ZXMN3A02X8TC is a single-channel N-channel enhancement-mode field-effect transistor designed for use in low-voltage and low-current applications. This device combines high threshold voltage, fast switching speeds and low on-resistance together, making it ideal for high performance circuits and power management. The device has the standard TO-252 (DPAK) plastic package.
The ZXMN3A02X8TC application field primarily includes any low-voltage and low-current circuits. Such applications include level shifter circuit, linear regulator, power switch circuit, power supply, motor driving, switching regulators, and so on.
The working principle of the ZXMN3A02X8TC is very simple. It is a voltage-controlled device that relies on transistor action to provide electrical switching between source and drain terminals. That is, when the gate-source voltage is applied, the current flows from the source to the drain. The low on-resistance makes the ZXMN3A02X8TC ideal for use in low voltage and low current circuits as it reduces power loss and improves system efficiency.
The ZXMN3A02X8TC is also designed with fast switching speeds and high threshold voltage. This allows the device to meet the switching requirements of high performance circuits. It also reduces the amount of power consumed by the device, thereby reducing heat generation.
The ZXMN3A02X8TC also features protection against electrostatic discharge (ESD). The device is designed to withstand an ESD pulse up to 2kV, which makes it suitable for use in handheld devices.
In conclusion, the ZXMN3A02X8TC is a single-channel N-channel enhancement-mode field-effect transistor designed for use in low-voltage and low-current applications. It combines high threshold voltage, fast switching speeds and low on-resistance together, making it ideal for high performance circuits and power management. The protection against electrostatic discharge makes the device suitable for use in handheld devices. This device is thus an excellent choice for any low-voltage and low-current circuits.
The specific data is subject to PDF, and the above content is for reference
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