Allicdata Part #: | HUFA75429D3ST-ND |
Manufacturer Part#: |
HUFA75429D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 125W (Tc) Surface Mount D-P... |
DataSheet: | HUFA75429D3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The HUFA75429D3ST is a type of highly integrated NFET ( power metal-oxide–semiconductor field-effect transistor, or MOSFET ). It is a single N-channel enhancement-mode device that offers superior performance in power efficiency and RDS(ON). This device is particularly suitable for a variety of applications including, but not limited to DC/DC conversion, load switches, switch-mode power supplies (SMPSs), motor control, LED lighting and many other power conversion applications.
The HUFA75429D3ST is designed with a special methodology for power savings, as it has an extremely low gate charge, as well as lower power losses and high power efficiency. This makes it ideal for a number of applications that require high power efficiency and low power dissipation.
The working principle of HUFA75429D3ST is based on MOSFET technology. MOSFETs are voltage-controlled devices, operated by a single voltage input that is applied to the Gate terminal. Once the voltage is supplied, the device behaves as a switch. The MOSFET will quickly turn the load ‘ON’ or ‘OFF’, depending on the application. Furthermore, controlled by a single input voltage, the output voltage of HUFA75429D3ST can be easily adjusted with a single variable.
The typical safe operating area of the HUFA75429D3ST is also a key advantage, as the device is rated at 4.5V over 4A, making it suitable for many applications that require a high level of performance in power supply and load switch applications. The maximum current capability of this device is 8 Amps, which is higher than most other similar devices in the same class.
The HUFA75429D3ST can be applied in many applications including DC/DC converters, switch-mode power supplies, battery chargers, automotive electronics, motor controls, LED lightings, etc. Due to its smaller size and lower power consumption, it is widely used in portable devices such as smart phones, tablets, and medical devices.
In conclusion, the HUFA75429D3ST is a versatile and powerful NFET device that has a well-rounded set of features and benefits, making it suitable for a wide range of applications. Firstly, its low gate charge enables excellent power efficiency and RDS(ON) performance. Secondly, it is suitable for a variety of applications that demand high performance in power efficiency and dissipates a low amount of power. Thirdly, it is small in size and has a maximum current rating of 8A which is higher than similar devices in the same class. Finally, its typical safe operating area allows it to be used in many applications, including DC/DC converters, switch-mode power supplies, battery chargers, automotive electronics, motor controls, and LED lightings. Therefore, HUFA75429D3ST truly deserves the name of a highly integrated NFET.
The specific data is subject to PDF, and the above content is for reference
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