Cap alum 330uf 150v thru hole - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IXTC130N15T-ND	IXTC130N15T	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Mounting Type: Through Hole Supplier Device Package: ISOPLUS220 Package / Case: ISOPLUS220	1000 Order	1+: $0
IXTP38N15T-ND	IXTP38N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	50+: $1.3222
IXTV120N15T-ND	IXTV120N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	1000 Order	50+: $3.7656
IXTV130N15T-ND	IXTV130N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 130A (Tc) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	1000 Order	50+: $3.7873
IXTH56N15T-ND	IXTH56N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $1.8094
IXTP24N15T-ND	IXTP24N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	50+: $0.994
IXTP44N15T-ND	IXTP44N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 44A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	50+: $1.3584
IXTQ56N15T-ND	IXTQ56N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $1.679
IXTH74N15T-ND	IXTH74N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 74A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $2.054
IXTH120N15T-ND	IXTH120N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $3.1462
IXTP74N15T-ND	IXTP74N15T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 74A (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	50+: $1.6464
IXTQ120N15T-ND	IXTQ120N15T	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $2.9994
IXTQ88N15-ND	IXTQ88N15	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $4.6784
SFH9154-ND	SFH9154	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power Dissipation (Max): 204W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
IRFSL4228PBF-ND	IRFSL4228PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRFP3415PBF-ND	IRFP3415PBF	Infineon Technologies	View more Series: HEXFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	4013 Order	--
1727-4644-ND	PHP28NQ15T,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 28.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 30V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3886 Order	1+: $0.8568 50+: $0.6834 100+: $0.598 500+: $0.4638 1000+: $0.3661
IXFP110N15T2-ND	IXFP110N15T2	IXYS	View more Series: GigaMOS, HiPerFET, TrenchT2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IXTR36P15P-ND	IXTR36P15P	IXYS	View more Series: PolarP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	30+: $4.5299
AUIRF6215-ND	AUIRF6215	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRFB4321PBF-ND	IRFB4321PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V Power Dissipation (Max): 350W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
FQPF16N15-ND	FQPF16N15	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Power Dissipation (Max): 53W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--
2SK4151TZ-E-ND	2SK4151TZ-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 500mA, 4V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 10V Power Dissipation (Max): 750mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
FDP79N15-ND	FDP79N15	ON Semiconductor	View more Series: UniFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 39.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V Power Dissipation (Max): 463W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	--
IRFB4321GPBF-ND	IRFB4321GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IXFH96N15P-ND	IXFH96N15P	IXYS	View more Series: PolarHT HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	30+: $3.4232
FQA28N15-ND	FQA28N15	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	827 Order	--
IXFR80N15Q-ND	IXFR80N15Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Power Dissipation (Max): 310W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	1+: $0
FQA90N15-F109-N D	FQA90N15-F109	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	241 Order	1+: $4.2903 10+: $3.8298 450+: $2.834 900+: $2.2978 1350+: $2.1446
FQH90N15-ND	FQH90N15	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	--
IRFSL5615PBF-ND	IRFSL5615PBF	Infineon Technologies	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $0.8129
IXTQ150N15P-ND	IXTQ150N15P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Power Dissipation (Max): 714W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	--
FDPF770N15A-ND	FDPF770N15A	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 75V Power Dissipation (Max): 21W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	1130 Order	--
IXTH36P15P-ND	IXTH36P15P	IXYS	View more Series: PolarP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $4.1586
IXTQ62N15P-ND	IXTQ62N15P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power Dissipation (Max): 350W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	--
STP40NS15-ND	STP40NS15	STMicroelectronics	View more Series: MESH OVERLAY Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRFSL4615PBF-ND	IRFSL4615PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
FQA90N15FS-ND	FQA90N15	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	202 Order	--
IRFB41N15DPBF-N D	IRFB41N15DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	141 Order	1+: $1.6821 10+: $1.5215 100+: $1.2226 500+: $0.9509 1000+: $0.7879
FQPF5N15-ND	FQPF5N15	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Power Dissipation (Max): 32W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--

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