IXTV130N15T

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The IXTV130N15T is a Single Field-Effect Transistor (FET) from Infineon Technologies. It is a 50V N-channel enhancement mode MOSFET and is built using two proprietary process technologies. These two technologies are OptiMOS and Ultralow Threshold Voltage (UTV) technologies. These technologies have enabled IXTV130N15T to deliver a superior blend of performance and cost.

The IXTV130N15T is designed to be a low-cost solution for high-power, high-performance applications. It is perfect for switching applications requiring low-on-resistance and fast switching time with low gate charge and low gate thresholds. This FET can also be used to control high-current load or to drive high-power loads. With its high-power capability, it is ideal for applications requiring high power density, such as motor control and power management circuits. It can also be used in automotive and audio applications.

The IXTV130N15T is a three-terminal device with a source, drain, and gate. When the gate-to-source voltage is 0V and the gate-to-drain voltage is negative, the FET is in its OFF state and no current flows between source and drain. When the gate voltage is increased to a high enough negative voltage, the FET turns ON and current flows from source to drain. The amount of current that flows between source and drain is proportional to the gate voltage.

The turn-on resistance (RDS(on)) of the IXTV130N15T is typically 4 milliohms with gate-source voltage of -3 V. The advantage of low RDS(on) is improved efficiency, since less power is dissipated when the device is in ON state. The total gate charge, Qg, is 0.3 nano Coulomb, or 350 picoseconds in time. This ensures that the device will switch ON and OFF quickly, reducing switching losses. The device supports drain-source voltages (VDS) up to 40V and drain-source current (ID) up to 13A. Typical applications for the IXTV130N15T include linear and switching regulators, high voltage buck and boost converters, and motor control circuits.

In summary, the IXTV130N15T is an N-channel enhancement mode MOSFET suitable for a wide range of high-power, high-performance applications. With its low-on-resistance, fast switching times, low gate charge and threshold, and high power density, it is perfect for applications in automotive, audio, motor control, and power management. Its superior blend of cost and performance makes it an ideal choice for many of today’s applications.

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