IXTH96N25T

The IXTH96N25T is a N-channel MOSFET that is suitable for a variety of applications. This type of MOSFET uses a single gate that controls the conduction between the drain and source. The IXTH96N25T has a maximum drain-source voltage of 250 V, a drain-source current of 96 A, and an on-resistance of 0.0093 ohms. The IXTH96N25T also has a gate-source threshold voltage of 4.5 V, a gate charge of 123 nC, and a maximum operating temperature of 150 °C.

The IXTH96N25T is primarily used in applications that require high power operating capabilities such as motor control, power switching, and energy conversion. This MOSFET is also used in applications that require excellent thermal performance such as in high-temperature or automotive applications. Due to its high maximum drain-source voltage rating, the IXTH96N25T is suitable for many high-voltage semiconductor power devices such as IGBTs, BJTs, and others.

The working principle of the MOSFET is based on the concept of majority carrier conduction. Transistors, such as the IXTH96N25T, consist of a channel of semiconductor material between the source and drain. Applying a gate voltage controls the number of majority carriers, either electrons or holes, in the channel. When the gate voltage exceeds a certain threshold voltage, the channel is opened and conduction occurs between the source and drain. When the gate voltage is decreased, the channel is closed, and conduction stops.

The IXTH96N25T is a robust and reliable device that can handle a variety of applications. It is resistant to ESD, has excellent thermal characteristics, and features a high maximum drain-source voltage rating. This makes it ideal for many high-power applications. Due to its low on-resistance and high current rating, the IXTH96N25T is a great choice for applications that require efficient and reliable power delivery.