IXTH240N055T Allicdata Electronics
Allicdata Part #:

IXTH240N055T-ND

Manufacturer Part#:

IXTH240N055T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 240A TO-247
More Detail: N-Channel 55V 240A (Tc) 480W (Tc) Through Hole TO-...
DataSheet: IXTH240N055T datasheetIXTH240N055T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXTH240N055T is a type of single enhancement-mode N-channel MOSFET which is applicable for Power Management and power conversion, automotive electronics and other industrial applications. It has been designed and manufactured to have improved thermal management and a guaranteed avalanche energy. Moreover, its on-resistance is low and it has an impressive power dissipation capability. In this article, we will discuss its features, advancements over the previous models and its feedback design.

Features

IXTH240N055T comes with various features which make it suitable for power efficient applications. These include its low on resistance, which ensures that less energy is wasted when driving the load. Its high switching frequency ensures a higher efficiency and it also has a low threshold voltage of 2V. Its RDS(max) is 4mΩ and its avalanche energy is 20mJ, which is an improvement over the old model.

Advantages

The IXTH240N055T has some advantages over the previous model. Its low RDS(on) helps reduce power dissipation and its superior thermal management allows better heat distribution, reducing losses and improving efficiency. Its low threshold voltage makes it compatible with low voltage systems, whereas its high operating temperature range allows for improved reliability. Its high power rating makes it suitable for industrial applications where large applications are operated. Lastly, its avalanche energy is improved over the old model.

Feedback Design

The feedback design of IXTH240N055T helps in further improving the efficiency and reliability of this power device. It comes with internal drain-source feedback which helps in controlling the drain voltage and maintaining a stable output. It also provides feedback information regarding the power dissipation, allowing for more efficient power management. It also helps in reducing the oscillations which occur when switching between different operating modes, resulting in improved power efficiency. Lastly, it also helps in reducing the complexity of the overall circuitry.

Conclusion

IXTH240N055T is a state of the art single enhancement-mode N-channel MOSFET which is suitable for power management and power conversion applications. It includes features such as low on-resistance, high switching frequency and low threshold voltage, helping to maximize the efficiency of the load. It also has a number of improvements in the new design such as improved thermal management, higher avalanche energy and a feedback design which helps to maintain a stable output. With all of these features, IXTH240N055T is a great choice for applications requiring high efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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